Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Nakajima, Akira, Liu, Pucheng, Ogura, Masahiko, Makino, Toshiharu, Kakushima, Kuniyuki, Nishizawa, Shin-ichi, Ohashi, Hiromichi, Yamasaki, Satoshi, Iwai, Hiroshi
Published in Journal of applied physics (21.04.2014)
Published in Journal of applied physics (21.04.2014)
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Journal Article
Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
Saito, Wataru, Omura, Ichiro, Ogura, Tsuneo, Ohashi, Hiromichi
Published in Solid-state electronics (01.09.2004)
Published in Solid-state electronics (01.09.2004)
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Journal Article
Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates
Hoshii, Takuya, Nakajima, Akira, Nishizawa, Shin-ichi, Ohashi, Hiromichi, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Tsutsui, Kazuo
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Impact of joint materials on the reliability of double-side packaged SiC power devices during high temperature aging
Lang, Fengqun, Nakagawa, Hiroshi, Aoyagi, Masahiro, Ohashi, Hiromichi, Yamaguchi, Hiroshi
Published in Journal of materials science. Materials in electronics (01.09.2010)
Published in Journal of materials science. Materials in electronics (01.09.2010)
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Journal Article
One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors
Nakajima, Akira, Nishizawa, Sin-ichi, Ohashi, Hiromichi, Yonezawa, Hiroaki, Tsutsui, Kazuo, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Iwai, Hiroshi
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
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Conference Proceeding
Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface
Nakajima, Akira, Liu, Pucheng, Ogura, Masahiko, Makino, Toshiharu, Nishizawa, Shin-ichi, Yamasaki, Satoshi, Ohashi, Hiromichi, Kakushima, Kuniyuki, Iwai, Hiroshi
Published in Applied physics express (01.09.2013)
Published in Applied physics express (01.09.2013)
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Journal Article
Analysis and prototyping of multicellular ac-dc converter for future dc distribution system
Hayashi, Yusuke, Matsugaki, Yoshikatsu, Ninomiya, Tamotsu, Ohashi, Hiromichi
Published in 2016 IEEE International Power Electronics and Motion Control Conference (PEMC) (01.09.2016)
Published in 2016 IEEE International Power Electronics and Motion Control Conference (PEMC) (01.09.2016)
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Conference Proceeding
ISPSD: 30 Year journey in advancing power semiconductor technology
Shibib, Ayman, Lorenz, Leo, Ohashi, Hiromichi
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels
Nakajima, Akira, Kubota, Shunsuke, Tsutsui, Kazuo, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Iwai, Hiroshi, Nishizawa, Shin-ichi, Ohashi, Hiromichi
Published in IET power electronics (10.04.2018)
Published in IET power electronics (10.04.2018)
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Journal Article