Transient performance analysis of graphene FET gated via ionic solid by numerical simulations based on tight-binding method and Nernst–Planck–Poisson equations
Arihori, Koki, Ogawa, Matsuto, Souma, Satofumi, Sato-Iwanaga, Junko, Suzuki, Masa-aki
Published in Journal of applied physics (28.08.2021)
Published in Journal of applied physics (28.08.2021)
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Journal Article
Electron mobility calculation for graphene on substrates
Hirai, Hideki, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto
Published in Journal of applied physics (28.08.2014)
Published in Journal of applied physics (28.08.2014)
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Journal Article
Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors
Ichii, Masato, Ishida, Ryoma, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto
Published in IEEE transactions on electron devices (01.04.2015)
Published in IEEE transactions on electron devices (01.04.2015)
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Journal Article
Influence of geometrical deformation and electric field on transport characteristics through carbon nanotubes
Mouri, Masaaki, Ogawa, Matsuto, Souma, Satofumi
Published in Journal of applied physics (01.12.2012)
Published in Journal of applied physics (01.12.2012)
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Journal Article
Transient simulation of graphene FET gated by electrolyte medium
Arihori, Koki, Ogawa, Matsuto, Souma, Satofumi, Sato-Iwanaga, Junko, Suzuki, Masa-aki
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
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Conference Proceeding
Strain-induced modulation of anisotropic photoconductivity in graphene
Mehdipour, Amir, Sasaoka, Kenji, Ogawa, Matsuto, Souma, Satofumi
Published in Japanese Journal of Applied Physics (01.11.2014)
Published in Japanese Journal of Applied Physics (01.11.2014)
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Journal Article
Effect of strain on electron mobility in graphene
Hirai, Hideki, Ogawa, Matsuto, Souma, Satofumi
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
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Conference Proceeding
Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
Shimoida, Kenta, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto
Published in Applied physics express (01.03.2013)
Published in Applied physics express (01.03.2013)
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Journal Article
Strain Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to Nanowire
Maegawa, T., Yamauchi, T., Hara, T., Tsuchiya, H., Ogawa, M.
Published in IEEE transactions on electron devices (01.04.2009)
Published in IEEE transactions on electron devices (01.04.2009)
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Journal Article
Channel Length Scaling Effects on Device Performance of Junctionless Field-Effect Transistor
Nagai, Katsuyuki, Tsuchiya, Hideaki, Ogawa, Matsuto
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Effects of increased acoustic phonon deformation potential and surface roughness scattering on quasi-ballistic transport in ultrascaled Si-MOSFETs
Koba, Shunsuke, Ishida, Ryoma, Kubota, Yuko, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto
Published in Japanese Journal of Applied Physics (01.11.2014)
Published in Japanese Journal of Applied Physics (01.11.2014)
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Journal Article
Channel length scaling limits of III-V channel MOSFETs governed by source-drain direct tunneling
Koba, Shunsuke, Ohmori, Masaki, Maegawa, Y suke, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation
Choi, Jaeil, Nagai, Katsuyuki, Koba, Shunsuke, Tsuchiya, Hideaki, Ogawa, Matsuto
Published in Applied physics express (01.05.2012)
Published in Applied physics express (01.05.2012)
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Journal Article