Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al sub(2)O sub(3)/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range
Gueclue, Cigdem S, Oezdemir, Ahmet Faruk, Altindal, Semsettin
Published in Applied physics. A, Materials science & processing (01.12.2016)
Published in Applied physics. A, Materials science & processing (01.12.2016)
Get full text
Journal Article
Analysis of current-voltage and capacitance―voltage―frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer
DURMUS ALI ALDEMIR, ESEN, Mustafa, KÖKCE, Ali, KARATAS, Selda, AHMET FARUK ÖZDEMIR
Published in Thin solid films (01.07.2011)
Published in Thin solid films (01.07.2011)
Get full text
Journal Article
Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes
Ali Aldemir, Durmuş, Kökce, Ali, Özdemir, Ahmet Faruk
Published in Microelectronic engineering (01.10.2012)
Published in Microelectronic engineering (01.10.2012)
Get full text
Journal Article