Search Results - "Oda, Hidekazu" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage

Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage

by Hao Qiu, Takeuchi, Kiyoshi, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in IEEE transactions on electron devices (01.11.2016)

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Journal Article

Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory

Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory

by Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2015)

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Journal Article

Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

by Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Shinohara, Hirofumi, Iwamatsu, Toshiaki, Oda, Hidekazu, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2014)

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Journal Article

Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors

Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors

by Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Iwamatsu, Toshiaki, Oda, Hidekazu, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2013)

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Journal Article

Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor

Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor

by Sakamoto, Toshitsugu, Tada, Munehiro, Tsuji, Yukihide, Makiyama, Hideki, Hasegawa, Takumi, Yamamoto, Yoshiki, Okanishi, Shinobu, Banno, Naoki, Miyamura, Makoto, Okamoto, Koichiro, Iguchi, Noriyuki, Ogasahara, Yasuhiro, Oda, Hidekazu, Kamohara, Shiro, Yamagata, Yasushi, Sugii, Nobuyuki, Hada, Hiromitsu
Published in Applied physics express (01.04.2015)

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Journal Article

Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

by Sugii, Nobuyuki, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Yamaguchi, Yasuo, Ishibashi, Koichiro, Mizutani, Tomoko, Hiramoto, Toshiro
Published in Journal of Low Power Electronics and Applications (24.04.2014)

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Journal Article Book Review

Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

by Hao Qiu, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)

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Conference Proceeding Journal Article

Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors

Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors

by Ishigaki, Takashi, Tsuchiya, Ryuta, Morita, Yusuke, Sugii, Nobuyuki, Kimura, Shinichiro, Iwamatsu, Toshiaki, Oda, Hidekazu, Inoue, Yasuo
Published in Japanese Journal of Applied Physics (01.07.2012)

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Journal Article

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

by Kamohara, Shiro, Sugii, Nobuyuki, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Hasegawa, Takumi, Okanishi, Shinobu, Yanagita, Hiroshi, Kadoshima, Masaru, Maekawa, Keiichi, Mitani, Hitoshi, Yamagata, Yasushi, Oda, Hidekazu, Yamaguchi, Yasuo, Ishibashi, Koichiro, Amano, Hideharu, Usami, Kimiyoshi, Kobayashi, Kazutoshi, Mizutani, Tomoko, Hiramoto, Toshiro
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)

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Conference Proceeding

Electrical Characteristics and Crystal Quality Analysis of Thin-Body Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using Two-Step Elevated Silicon Epitaxial Process

Electrical Characteristics and Crystal Quality Analysis of Thin-Body Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using Two-Step Elevated Silicon Epitaxial Process

by Iwamatsu, Toshiaki, Terada, Takashi, Ishikawa, Kozo, Oda, Hidekazu, Inoue, Yasuo
Published in Japanese Journal of Applied Physics (01.04.2009)

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Journal Article

Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current

Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current

by Sugii, Nobuyuki, Tsuchiya, Ryuta, Ishigaki, Takashi, Morita, Yusuke, Yoshimoto, Hiroyuki, Iwamatsu, Toshiaki, Oda, Hidekazu, Inoue, Yasuo, Hiramoto, Toshiro, Kimura, Shin'ichiro
Published in Japanese Journal of Applied Physics (01.04.2009)

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Journal Article

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

by ODA HIDEKAZU
Year of Publication 20.02.2017

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Patent

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

by ODA HIDEKAZU
Year of Publication 01.04.2016

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Patent

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

by ODA HIDEKAZU
Year of Publication 23.12.2015

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Patent

Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond

Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond

by Hayashi, Takashi, Yamashita, Tomohiro, Shiga, Katsuya, Hayashi, Kiyoshi, Oda, Hidekazu, Eimori, Takahisa, Inuishi, Masahide, Ohji, Yuzuru
Published in Japanese Journal of Applied Physics (01.04.2005)

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Journal Article

A Robust SOI SRAM Architecture by using Advanced ABC technology for 32nm node and beyond LSTP devices

A Robust SOI SRAM Architecture by using Advanced ABC technology for 32nm node and beyond LSTP devices

by Hirano, Y., Tsujiuchi, M., Ishikawa, K., Shinohara, H., Terada, T., Maki, Y., Iwamatsu, T., Eikyu, K., Uchida, T., Obayashi, S., Nii, K., Tsukamoto, Y., Yabuuchi, M., Ipposhi, T., Oda, H., Inoue, Y.
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)

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Conference Proceeding

Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices

Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices

by Sugihara, Kohei, Nakahata, Takumi, Matsumoto, Takuji, Maeda, Shigenobu, Maegawa, Shigeto, Ota, Kazunobu, Sayama, Hirokazu, Oda, Hidekazu, Eimori, Takahisa, Abe, Yuji, Ozeki, Tatsuo, Inoue, Yasuo, Nishimura, Tadashi
Published in Japanese Journal of Applied Physics (2003)

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Journal Article

Statistical analysis of minimum operation voltage (Vmin) in fully depleted silicon-on-thin-BOX (SOTB) SRAM cells

Statistical analysis of minimum operation voltage (Vmin) in fully depleted silicon-on-thin-BOX (SOTB) SRAM cells

by Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in 2014 Silicon Nanoelectronics Workshop (SNW) (01.06.2014)

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Conference Proceeding

Statistical analysis of four write stability metrics in fully depleted silicon-on-thin-BOX (SOTB) and bulk SRAM cells at low supply voltage

Statistical analysis of four write stability metrics in fully depleted silicon-on-thin-BOX (SOTB) and bulk SRAM cells at low supply voltage

by Hao Qiu, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (01.10.2014)

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Conference Proceeding

Activities of nicotinic acetylcholine receptors modulate neurotransmission and synaptic architecture

Activities of nicotinic acetylcholine receptors modulate neurotransmission and synaptic architecture

by Oda, Akira, Tanaka, Hidekazu
Published in Neural regeneration research (15.12.2014)

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Journal Article

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