High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
Sun, X., D'Emic, C., Cheng, C-W, Majumdar, A., Sun, Y., Cartier, E., Bruce, R. L., Frank, M., Miyazoe, H., Shiu, K-T, Lee, S., Rozen, J., Patel, J., Ando, T., Song, W-B, Lofaro, M., Krishnan, M., Obrodovic, B., Lee, K-T, Tsai, H., Wang, W-E, Spratt, W., Chan, K., Lee, S., Yau, J-B, Hashemi, P., Khojasteh, M., Cantoro, M., Ott, J., Rakshit, T., Zhu, Y., Sadana, D., Yeh, C-C, Narayanan, V., Mo, R. T., Heo, Y-C, Kim, D-W, Rodder, M. S., Leobandung, E.
Published in 2017 Symposium on VLSI Technology (01.06.2017)
Published in 2017 Symposium on VLSI Technology (01.06.2017)
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