Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses
Puzanov, A. S., Bibikova, V. V., Zabavichev, I. Yu, Obolenskaya, E. S., Potekhin, A. A., Tarasova, E. A., Vostokov, N. V., Kozlov, V. A., Obolensky, S. V.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2021)
Get full text
Journal Article
Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range
Dyukov, D. I., Fefelov, A. G., Korotkov, A. V., Pavelyev, D. G., Kozlov, V. A., Obolenskaya, E. S., Ivanov, A. S., Obolensky, S. V.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
Get full text
Journal Article
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
Golikov, O. L., Zabavichev, I. Yu, Ivanov, A. S., Obolensky, S. V., Obolenskaya, E. S., Paveliev, D. G., Potekhin, A. A., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.
Published in Russian microelectronics (01.02.2024)
Published in Russian microelectronics (01.02.2024)
Get full text
Journal Article
Calculating Current–Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods
Khazanova, S. V., Golikov, O. L., Puzanov, A. S., Tarasova, E. A., Zabavichev, I. Yu, Potekhin, A. A., Obolenskaya, E. S., Ivanov, A. S., Paveliev, D. G., Obolensky, S. V.
Published in Bulletin of the Russian Academy of Sciences. Physics (01.06.2023)
Published in Bulletin of the Russian Academy of Sciences. Physics (01.06.2023)
Get full text
Journal Article
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices
Pavelyev, D. G., Vasilev, A. P., Kozlov, V. A., Obolenskaya, E. S.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2018)
Get full text
Journal Article
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices
Obolenskaya, E. S., Ivanov, A. S., Pavelyev, D. G., Kozlov, V. A., Vasilev, A. P.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
Get full text
Journal Article
Simulation of the Response of a Low-Barrier Mott Diode to the Influence of Heavy Charged Particles from Outer Space
Puzanov, A. S., Bibikova, V. V., Zabavichev, I. Yu, Obolenskaya, E. S., Tarasova, E. A., Vostokov, N. V., Obolenskii, S. V.
Published in Technical physics letters (01.04.2021)
Published in Technical physics letters (01.04.2021)
Get full text
Journal Article
Optimization of the superlattice parameters for THz diodes
Pavelyev, D. G., Vasilev, A. P., Kozlov, V. A., Obolenskaya, E. S., Obolensky, S. V., Ustinov, V. M.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
Get full text
Journal Article
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
Zabavichev, I. Yu, Obolenskaya, E. S., Potekhin, A. A., Puzanov, A. S., Obolensky, S. V., Kozlov, V. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
Get full text
Journal Article
Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range
Pavelyev, D. G., Vasilev, A. P., Kozlov, V. A., Koschurinov, Yu. I., Obolenskaya, E. S., Obolensky, S. V., Ustinov, V. M.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2016)
Get full text
Journal Article
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
Tarasova, E. A., Obolenskaya, E. S., Hananova, A. V., Obolensky, S. V., Zemliakov, V. E., Egorkin, V. I., Nezhenzev, A. V., Saharov, A. V., Zazul’nokov, A. F., Lundin, V. V., Zavarin, E. E., Medvedev, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
Get full text
Journal Article
On the radiation resistance of planar Gunn diodes with δ-doped layers
Obolenskaya, E. S., Churin, A. Yu, Obolensky, S. V., Murel, A. V., Shashkin, V. I.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2015)
Get full text
Journal Article