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Year of Publication 05.08.2004
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Semiconductor device and method of producing the same
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Semiconductor storage device used as a DRAM device comprises a cell transistor structure with word lines having an n-diffusion layer with an n-carrier concentration which is higher on the region close to the word line of one cell
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Year of Publication 26.02.2004
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Year of Publication 16.08.2007
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Method for manufacturing semiconductor integrated circuit device
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Year of Publication 29.05.2007
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Year of Publication 29.05.2007
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Method for manufacturing semiconductor integrated circuit device
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Year of Publication 29.05.2007
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Semiconductor integrated circuit device and process for manufacturing the same
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Year of Publication 02.10.2003
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Semiconductor integrated circuit device and process for manufacturing the same
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Year of Publication 02.10.2003
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Year of Publication 02.10.2003
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Semiconductor integrated circuit device and process for manufacturing the same
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Year of Publication 29.04.2003
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Semiconductor integrated circuit device and process for manufacturing the same
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Year of Publication 29.04.2003
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Year of Publication 29.04.2003
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Semiconductor chip with a porous single crystal layer and manufacturing method of the same
OYU KIYONORI, HAMADA KOJI, WATANABE MASAHARU, OKONOGI KENSUKE, MIYAKE HIDEHARU, KOZUKI YASUSHI
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Year of Publication 09.11.2006
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Semiconductor integrated circuit device and process for manufacturing the same
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Year of Publication 01.11.2002
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Semiconductor integrated circuit device and process for manufacturing the same
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Year of Publication 18.04.2002
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Year of Publication 18.04.2002
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Semiconductor integrated circuit device and process for manufacturing the same
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Year of Publication 18.04.2002
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Year of Publication 18.04.2002
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Method for manufacturing semiconductor integrated circuit device
UCHIYAMA HIROYUKI, OKUYAMA KOUSUKE, OYU KIYONORI, KUMAUCHI TAKAHIRO, ICHISE TERUHISA, NAGAI RYO, KUJIRAI HIROSHI, HATA KAZUHIRO
Year of Publication 28.04.2005
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Year of Publication 28.04.2005
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Method for manufacturing semiconductor integrated circuit device
UCHIYAMA HIROYUKI, OKUYAMA KOUSUKE, OYU KIYONORI, KUMAUCHI TAKAHIRO, ICHISE TERUHISA, NAGAI RYO, KUJIRAI HIROSHI, HATA KAZUHIRO
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Year of Publication 07.12.2004
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Method for manufacturing semiconductor integrated circuit device
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Year of Publication 07.12.2004
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Producing semiconductor device used as a MOSFET comprises successively forming a gate insulating film, a polysilicon layer, a barrier film and a metal film on a semiconductor substrate, etching, nitriding, and selectively oxidizing
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Year of Publication 05.08.2004
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Year of Publication 05.08.2004
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