Independent-Double-Gate FinFET SRAM for Leakage Current Reduction
Endo, K., O'uchi, S.-I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Masahara, M., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E.
Published in IEEE electron device letters (01.07.2009)
Published in IEEE electron device letters (01.07.2009)
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Journal Article
Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs
Endo, K., Ishikawa, Y., Liu Yongxum, Masahara, M., Matsukawa, T., O'uchi, S.-I., Ishii, K., Yamauchi, H., Tsukada, J., Suzuki, E.
Published in IEEE electron device letters (01.12.2007)
Published in IEEE electron device letters (01.12.2007)
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Journal Article
Metal-Gate FinFET Variation Analysis by Measurement and Compact Model
O'uchi, S.-i., Matsukawa, T., Nakagawa, T., Endo, K., Yongxun Liu, Sekigawa, T., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ishii, K., Suzuki, E., Koike, H., Sakamoto, K., Masahara, M.
Published in IEEE electron device letters (01.05.2009)
Published in IEEE electron device letters (01.05.2009)
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Journal Article
Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction
Endo, K., O'uchi, S.-i., Ishikawa, Y., Yongxun Liu, Matsukawa, T., Sakamoto, K., Masahara, M., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E.
Published in 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial (01.06.2008)
Published in 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial (01.06.2008)
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Conference Proceeding
Enhancing noise margins of FinFET SRAM by integrating Vth-controllable flexible-pass-gates
Endo, K., O'uchi, S.-i., Ishikawa, Y., Yongxum Liu, Matsukawa, T., Masahara, M., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E.
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01.09.2008)
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01.09.2008)
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Conference Proceeding
Enhancing SRAM cell performance by using independent double-gate FinFET
Endo, K., O'uchi, S.-I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E., Masahara, M.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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Conference Proceeding
Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS
Yongxun Liu, Hayashida, T., Matsukawa, T., Endo, K., Masahara, M., O'uchi, S.-i., Sakamoto, K., Ishii, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., Suzuki, E.
Published in 2007 International Semiconductor Device Research Symposium (01.12.2007)
Published in 2007 International Semiconductor Device Research Symposium (01.12.2007)
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Conference Proceeding