Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN
Jinno, Daiki, Otsuki, Shunya, Sugimori, Shogo, Daicho, Hisayoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Journal of crystal growth (15.12.2017)
Published in Journal of crystal growth (15.12.2017)
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Journal Article
Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates
Jinno, Daiki, Otsuki, Shunya, Sugimori, Shogo, Daicho, Hisayoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Journal of crystal growth (15.02.2018)
Published in Journal of crystal growth (15.02.2018)
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Journal Article
Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by metalorganic vapor phase epitaxy
Otsuki, Shunya, Jinno, Daiki, Daicho, Hisayoshi, Kamiyama, Satoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Annealing of the sputtered AlN buffer layer on r‐plane sapphire and its effect on a‐plane GaN crystalline quality
Jinno, Daiki, Otsuki, Shunya, Niimi, Teruyuki, Sugimori, Shogo, Daicho, Hisayoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article