Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics
Migita, Shinji, Ota, Hiroyuki, Yamada, Hiroyuki, Shibuya, Keisuke, Sawa, Akihito, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates
Migita, Shinji, Ota, Hiroyuki, Asanuma, Shutaro, Morita, Yukinori, Toriumi, Akira
Published in Applied physics express (01.05.2021)
Published in Applied physics express (01.05.2021)
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Journal Article
Mortality and prognostic factors for spontaneous pneumothorax in older adults
Nishizawa, Saori, Tobino, Kazunori, Murakami, Yousuke, Uchida, Kazuki, Kawabata, Takafumi, Ota, Hiroyuki, Hiramatsu, Yuri, Sueyasu, Takuto, Tsuruno, Kosuke
Published in PloS one (08.09.2023)
Published in PloS one (08.09.2023)
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Journal Article
Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments
Migita, Shinji, Ota, Hiroyuki, Shibuya, Keisuke, Yamada, Hiroyuki, Sawa, Akihito, Matsukawa, Takashi, Toriumi, Akira
Published in Japanese Journal of Applied Physics (05.03.2019)
Published in Japanese Journal of Applied Physics (05.03.2019)
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Journal Article
Thermal stability of ferroelectricity in hafnium–zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectric-gate transistor applications
Mohit, Migita, Shinji, Ota, Hiroyuki, Morita, Yukinori, Tokumitsu, Eisuke
Published in Applied physics express (01.04.2021)
Published in Applied physics express (01.04.2021)
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Journal Article
Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal-insulator-semiconductor gate stack structures using Hf0.5Zr0.5O2 films
Migita, Shinji, Ota, Hiroyuki, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.11.2019)
Published in Japanese Journal of Applied Physics (01.11.2019)
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Journal Article
Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering
Hara, Yuki, Mohit, Murakami, Tatsuya, Migita, Shinji, Ota, Hiroyuki, Morita, Yukinori, Tokumitsu, Eisuke
Published in Japanese Journal of Applied Physics (01.11.2021)
Published in Japanese Journal of Applied Physics (01.11.2021)
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Journal Article
First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs
Wen Hsin Chang, Irisawa, Toshifumi, Ishii, Hiroyuki, Hattori, Hiroyuki, Ota, Hiroyuki, Takagi, Hideki, Kurashima, Yuichi, Uchida, Noriyuki, Maeda, Tatsuro
Published in IEEE transactions on electron devices (01.11.2017)
Published in IEEE transactions on electron devices (01.11.2017)
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Journal Article
Evaluation of Apparent Noise on CT Images Using Moving Average Filters
Fujii, Keisuke, Nomura, Keiichi, Imai, Kuniharu, Muramatsu, Yoshihisa, Tsushima, So, Ota, Hiroyuki
Published in Journal of digital imaging (01.02.2022)
Published in Journal of digital imaging (01.02.2022)
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Journal Article
Radiation Dose Reduction for Computed Tomography Localizer Radiography Using an Ag Additional Filter
Nomura, Keiichi, Fujii, Keisuke, Goto, Takahiro, Tsukagoshi, Shinsuke, Ota, Hiroyuki, Iwabuchi, Yuto, Suzuki, Hidenobu, Muramatsu, Yoshihisa, Kobayashi, Tatsushi
Published in Journal of computer assisted tomography (01.01.2021)
Published in Journal of computer assisted tomography (01.01.2021)
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Journal Article
Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance
Ota, Hiroyuki, Migita, Shinji, Hattori, Junichi, Fukuda, Koichi, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.08.2016)
Published in Japanese Journal of Applied Physics (01.08.2016)
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Journal Article
Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment
Mohit, Wen, Yuli, Hara, Yuki, Migita, Shinji, Ota, Hiroyuki, Morita, Yukinori, Ohdaira, Keisuke, Tokumitsu, Eisuke
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
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Journal Article
Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−XO2-Based Metal-Ferroelectric Semiconductor
Onaya, Takashi, Nabatame, Toshihide, Inoue, Mari, Sawada, Tomomi, Ota, Hiroyuki, Morita, Yukinori
Published in ECS transactions (01.10.2021)
Published in ECS transactions (01.10.2021)
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Journal Article
Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)
Onaya, Takashi, Nabatame, Toshihide, Inoue, Mari, Sawada, Tomomi, Ota, Hiroyuki, Morita, Yukinori
Published in APL materials (01.05.2022)
Published in APL materials (01.05.2022)
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Journal Article
Discovery of the First Potent and Orally Available Agonist of the Orphan G‑Protein-Coupled Receptor 52
Setoh, Masaki, Ishii, Naoki, Kono, Mitsunori, Miyanohana, Yuhei, Shiraishi, Eri, Harasawa, Toshiya, Ota, Hiroyuki, Odani, Tomoyuki, Kanzaki, Naoyuki, Aoyama, Kazunobu, Hamada, Teruki, Kori, Masakuni
Published in Journal of medicinal chemistry (26.06.2014)
Published in Journal of medicinal chemistry (26.06.2014)
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Journal Article
Structural advantages of silicon-on-insulator FETs over FinFETs in steep subthreshold-swing operation in ferroelectric-gate FETs
Ota, Hiroyuki, Migita, Shinji, Hattori, Junichi, Fukuda, Koichi, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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