Review of bias-temperature instabilities at the III-N/dielectric interface
Ostermaier, C., Lagger, P., Reiner, M., Pogany, D.
Published in Microelectronics and reliability (01.03.2018)
Published in Microelectronics and reliability (01.03.2018)
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Journal Article
On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices
Stabentheiner, M., Diehle, P., Hübner, S., Lejoyeux, M., Altmann, F., Neumann, R., Taylor, A. A., Pogany, D., Ostermaier, C.
Published in Journal of applied physics (14.01.2024)
Published in Journal of applied physics (14.01.2024)
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Journal Article
A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests
Wieland, D., Ofner, S., Stabentheiner, M., Butej, B., Koller, C., Sun, J., Minetto, A., Reiser, K., Haberlen, O., Nelhiebel, M., Glavanovics, M., Pogany, D., Ostermaier, C.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates
Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Lugani, L., Grandjean, N., Bertagnolli, E., Pogany, D., Strasser, G.
Published in Thin solid films (31.07.2012)
Published in Thin solid films (31.07.2012)
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Journal Article
Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquiere, C., DeJaeger, J.-C., Cico, K., Frohlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J.
Published in IEEE electron device letters (01.10.2009)
Published in IEEE electron device letters (01.10.2009)
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Journal Article
Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics
ABERMANN, S, POZZOVIVO, G, BERTAGNOLLI, E, KUZMIK, J, OSTERMAIER, C, HENKEL, C, BETHGE, O, STRASSER, G, POGANY, D, CARLIN, J.-F, GRANDJEAN, N
Published in Electronics letters (2009)
Published in Electronics letters (2009)
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Journal Article
Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTs
Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, Hajdin, Grasser, T.
Published in 2015 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2015)
Published in 2015 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2015)
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Conference Proceeding
Journal Article
Interface characterization of ALD deposited Al2O3 on GaN by CV method
Ostermaier, C., Lee, H.-C., Hyun, S.-Y., Ahn, S.-I., Kim, K.-W., Cho, H.-I., Ha, J.-B., Lee, J.-H.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
Dot-array implantation for patterned doping of semiconductors
Wanzenboeck, H.D., Ostermaier, C., Gruen, A., Eichinger, B., Karner, M., Bertagnolli, E.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.01.2006)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.01.2006)
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Journal Article
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
Nardo, A., De Santi, C., Koller, C., Ostermaier, C., Daumiller, I., Meneghesso, G., Zanoni, E., Meneghini, M.
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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Journal Article
Stress and Recovery Dynamics of Drain Current in GaN HD-GITs Submitted to DC Semi-ON stress
Padovan, V., Koller, C., Pobegen, G., Ostermaier, C., Pogany, D.
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article
Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse bias
Stabentheiner, M., Diehle, P., Altmann, F., Hübner, S., Lejoyeux, M., Taylor, A.A., Wieland, D., Pogany, D., Ostermaier, C.
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
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Journal Article
Matching in-situ and ex-situ recorded stress gradients in an AlxGa1−xN Heterostructure: Complementary wafer curvature analyses in time and space
Reisinger, M., Ostermaier, C., Tomberger, M., Zechner, J., Sartory, B., Ecker, W., Daumiller, I., Keckes, J.
Published in Scripta materialia (01.04.2018)
Published in Scripta materialia (01.04.2018)
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Journal Article
Modification of "native" surface donor states in AlGaN/GaN MIS-HEMTs by fluorination: Perspective for defect engineering
Reiner, M., Lagger, P., Prechtl, G., Steinschifter, P., Pietschnig, R., Pogany, D., Ostermaier, C.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs
Grill, A., Stampfer, B., Im, Ki-Sik, Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T.
Published in Solid-state electronics (01.06.2019)
Published in Solid-state electronics (01.06.2019)
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Journal Article
Enhancement of Vth drift for repetitive gate stress pulses due to charge feedback effect in GaN MIS-HEMTs
Lagger, P., Ostermaier, C., Pogany, D.
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
Capriotti, M., Bahat Treidel, E., Fleury, C., Bethge, O., Ostermaier, C., Rigato, M., Lancaster, S.L.C., Brunner, F., Detz, H., Hilt, O., Würfl, J., Pogany, D., Strasser, G.
Published in Solid-state electronics (01.11.2016)
Published in Solid-state electronics (01.11.2016)
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Journal Article
Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier
Kuzmik, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquière, Christophe, de Jaeger, Jean-Claude, Cico, K., Frölich, K., Skriniarova, J., Kovacs, J., Strasser, G., Pogany, D., Gornik, E.
Published in IEEE transactions on electron devices (01.09.2010)
Published in IEEE transactions on electron devices (01.09.2010)
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Journal Article
Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs
Grill, A., Stampfer, B., Waltl, M., Ki-Sik Im, Lee, J.-H, Ostermaier, C., Ceric, H., Grasser, T.
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding
Explanation of threshold voltage scaling in enhancement-mode InAIN/AIN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates
ALEXEWICZ, A, OSTERMAIER, C, HENKEL, C, BETHGE, O, CARLIN, J.-F, LUGANI, L, GRANDJEAN, N, BERTAGNOLLI, E, POGANY, D, STRASSER, G
Published in Thin solid films (2012)
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Published in Thin solid films (2012)
Journal Article