Introducing crystalline rare-earth oxides into Si technologies
Osten, H. J., Laha, A., Czernohorsky, M., Bugiel, E., Dargis, R., Fissel, A.
Published in Physica status solidi. A, Applications and materials science (01.04.2008)
Published in Physica status solidi. A, Applications and materials science (01.04.2008)
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Journal Article
MBE-grown Si and Si1−xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device
Manna, S, Aluguri, R, Katiyar, A, Das, S, Laha, A, Osten, H J, Ray, S K
Published in Nanotechnology (20.12.2013)
Published in Nanotechnology (20.12.2013)
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Journal Article
Improvement of crystal quality and surface morphology of Ge/Gd2O3/Si(111) epitaxial layers by cyclic annealing and regrowth
Nanwani, Alisha, Pokharia, Ravindra Singh, Schmidt, Jan, Osten, H J, Mahapatra, Suddhasatta
Published in Journal of physics. D, Applied physics (17.03.2022)
Published in Journal of physics. D, Applied physics (17.03.2022)
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Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
Tetzlaff, D., Wietler, T.F., Bugiel, E., Osten, H.J.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Conference Proceeding
Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study
Wang, J X, Laha, A, Fissel, A, Schwendt, D, Dargis, R, Watahiki, T, Shayduk, R, Braun, W, Liu, T M, Osten, H J
Published in Semiconductor science and technology (01.04.2009)
Published in Semiconductor science and technology (01.04.2009)
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CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
GOTTLOB, H. D. B, ECHTERMEYER, T, OSTEN, H.-J, FISSEL, A, MOLLENHAUER, T, EFAVI, J. K, SCHMIDT, M, WAHLBRINK, T, LEMME, M. C, KURZ, H, CZERNOHORSKY, M, BUGIEL, E
Published in Solid-state electronics (01.06.2006)
Published in Solid-state electronics (01.06.2006)
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Conference Proceeding
Journal Article
Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing
Czernohorsky, M, Tetzlaff, D, Bugiel, E, Dargis, R, Osten, H J, Gottlob, H D B, Schmidt, M, Lemme, M C, Kurz, H
Published in Semiconductor science and technology (01.03.2008)
Published in Semiconductor science and technology (01.03.2008)
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Journal Article
Photonic crystals for highly efficient silicon single junction solar cells
Krügener, J., Rienäcker, M., Schäfer, S., Sanchez, M., Wolter, S., Brendel, R., John, S., Osten, H.J., Peibst, R.
Published in Solar energy materials and solar cells (01.12.2021)
Published in Solar energy materials and solar cells (01.12.2021)
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Journal Article
Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications
Laha, Apurba, Bugiel, E., Fissel, A., Osten, H.J.
Published in Microelectronic engineering (01.12.2008)
Published in Microelectronic engineering (01.12.2008)
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Conference Proceeding
Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)
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Conference Proceeding
Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications
Laha, Apurba, Kühne, D, Bugiel, E, Fissel, A, Osten, H J
Published in Semiconductor science and technology (01.08.2008)
Published in Semiconductor science and technology (01.08.2008)
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Journal Article
Integration of functional epitaxial oxides into silicon: from high- k application to nanostructures
Osten, H.J., Czernohorsky, M., Dargis, R., Laha, A., Kühne, D., Bugiel, E., Fissel, A.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties
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Conference Proceeding
Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy
Khiangte, Krista R, Rathore, Jaswant S, Schmidt, J, Osten, H J, Laha, A, Mahapatra, S
Published in Journal of physics. D, Applied physics (15.08.2018)
Published in Journal of physics. D, Applied physics (15.08.2018)
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Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy
Barnscheidt, Y, Schmidt, J, Wetzel, G, Tetzlaff, D, Wietler, T F, Osten, H J
Published in Semiconductor science and technology (01.10.2018)
Published in Semiconductor science and technology (01.10.2018)
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Journal Article
Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals
BADYLEVICH, M, SHAMUILIA, S, AFANAS'EV, V. V, STESMANS, A, LAHA, A, OSTEN, H. J, FISSEL, A
Published in Microelectronic engineering (01.12.2008)
Published in Microelectronic engineering (01.12.2008)
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Conference Proceeding
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Charge trapping in ultrathin Gd2O3 high-k dielectric
NAZAROV, A. N, GOMENIUK, Y. V, GOMENIUK, Y. Y, GOTTLOB, H. D. B, SCHMIDT, M, LEMME, M. C, CZEMOHORSKY, M, OSTEN, H. J
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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