Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric
Nazarov, A. N.
Published in Semiconductor physics, quantum electronics, and optoelectronics (30.10.2008)
Published in Semiconductor physics, quantum electronics, and optoelectronics (30.10.2008)
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Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology
Knoll, D., Heinemann, B., Osten, H.J., Ehwald, B., Tillack, B., Schley, P., Barth, R., Matthes, M., Kwang Soo Park, Young Kim, Winkler, W.
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
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Conference Proceeding
Diffusion and electrical activity of copper in Si sub(1-x-y)Ge sub(x)C sub(y) alloys
Hattab, A, Aboelfotoh, M O, Tremblay, G, Meyer, F, Kolodzey, J, Osten, H J, Dubois, C
Published in Microelectronic engineering (01.01.2002)
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Published in Microelectronic engineering (01.01.2002)
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Can praseodymium oxide be an alternative high-K gate dielectric material for silicon integrated circuits?
Mussig, H.-J., Osten, H.-J., Bugiel, E., Dabrowski, J., Fissel, A., Guminskaya, T., Ignatovich, K., Liu, J.P., Zaumseil, P., Zavodinsky, V.
Published in 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580) (2001)
Published in 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580) (2001)
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Conference Proceeding
Epitaxial growth of Gd sub(2O) sub(3) on surfactant-mediated grown Ge films on Si(0 0 1) substrates
Wietler, T F, Laha, A, Bugiel, E, Czernohorsky, M, Dargis, R, Fissel, A, Osten, HJ
Published in Solid-state electronics (01.08.2009)
Published in Solid-state electronics (01.08.2009)
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Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy
Schmalz, K, Yassievich, IN, Rücker, H, Grimmeiss, HG, Frankenfeld, H, Mehr, W, Osten, HJ, Schley, P, Zeindl, HP
Published in Physical review. B, Condensed matter (15.11.1994)
Published in Physical review. B, Condensed matter (15.11.1994)
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Raeissi, B., Piscator, J., Engstrom, O., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K., Osten, H.J.
Published in ESSDERC 2007 (01.09.2007)
Published in ESSDERC 2007 (01.09.2007)
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Conference Proceeding
Stability and transport properties of microcrystalline Si 1− xGe x films
Edelman, F, Raz, T, Komem, Y, Stölzer, M, Werner, P, Zaumseil, P, Osten, H.-J, Griesche, J, Capitan, M
Published in Thin solid films (1999)
Published in Thin solid films (1999)
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MBE growth and properties of supersaturated, carbon-containing silicon/germanium alloys on Si(001)
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Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics
Gottlob, H.D.B., Echtermeyer, T., Mollenhauer, T., Schmidt, M., Efavi, J.K., Wahlbrink, T., Lemme, M.C., Kurz, H., Endres, R., Stefanov, Y., Schwalke, U., Czernohorsky, M., Bugiel, E., Fissel, A., Osten, H.J.
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
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Conference Proceeding
Growth and properties of strained Si 1-x-y Ge x C y layers
Jain, S C, Osten, H J, Dietrich, B, Rucker, H
Published in Semiconductor science and technology (01.10.1995)
Published in Semiconductor science and technology (01.10.1995)
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Thin films of CoSi sub(2) on Si sub(1-y)C sub(y) substrate layers
Teichert, S, Falke, M, Giesler, H, Sarkar, D K, Beddies, G, Hinneberg, H-J, Lippert, G, Griesche, J, Osten, H J
Published in Microelectronic engineering (01.01.2000)
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Published in Microelectronic engineering (01.01.2000)
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Silicide reaction of Co with Si sub(0.999)C sub(0.001)
Teichert, S, Falke, M, Giesler, H, Beddies, G, Hinneberg, H-J, Lippert, G, Griesche, J, Osten, H J
Published in Solid-state electronics (01.01.1999)
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Published in Solid-state electronics (01.01.1999)
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Initial stages of praseodymium oxide film formation on Si(001)
MÜSSIG, H.-J, DABROWSKI, J, IGNATOVICH, K, LIU, J. P, ZAVODINSKY, V, OSTEN, H. J
Published in Surface science (2002)
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Published in Surface science (2002)
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0.86-nm CET Gate Stacks With Epitaxial High- Dielectrics and FUSI NiSi Metal Electrodes
Gottlob, H.D.B, Echtermeyer, T, Schmidt, M, Mollenhauer, T, Efavi, J.K, Wahlbrink, T, Lemme, M.C, Czernohorsky, M, Bugiel, E, Fissel, A, Osten, H.J, Kurz, H
Published in IEEE electron device letters (01.10.2006)
Published in IEEE electron device letters (01.10.2006)
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