Process controllability of inductively coupled plasma-enhanced reactive sputter deposition for the fabrication of amorphous InGaZnOx channel thin-film transistors
Takenaka, Kosuke, Nakata, Keitaro, Otani, Hirofumi, Osaki, Soichiro, Uchida, Giichiro, Setsuhara, Yuichi
Published in Japanese Journal of Applied Physics (01.01.2016)
Published in Japanese Journal of Applied Physics (01.01.2016)
Get full text
Journal Article
Process controllability of inductively coupled plasma-enhanced reactive sputter deposition for the fabrication of amorphous InGaZnO x channel thin-film transistors
Takenaka, Kosuke, Nakata, Keitaro, Otani, Hirofumi, Osaki, Soichiro, Uchida, Giichiro, Setsuhara, Yuichi
Published in Japanese Journal of Applied Physics (01.01.2016)
Published in Japanese Journal of Applied Physics (01.01.2016)
Get full text
Journal Article
Process controllability of inductively coupled plasma-enhanced reactive sputter deposition for the fabrication of amorphous InGaZnO sub(x) channel thin-film transistors
Takenaka, Kosuke, Nakata, Keitaro, Otani, Hirofumi, Osaki, Soichiro, Uchida, Giichiro, Setsuhara, Yuichi
Published in Japanese Journal of Applied Physics (01.01.2016)
Published in Japanese Journal of Applied Physics (01.01.2016)
Get full text
Journal Article