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III NITRIDE EPITAXIAL SUBSTRATE AND DEEP ULTRAVIOLET LIGHT EMITTING DEVICE USING THE SAME
by
OOSHIKA YOSHIKAZU
Year of Publication
23.07.2013
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GROUP-III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMISSION ELEMENT, AND PRODUCTION METHOD FOR THESE
by
OOSHIKA
,
YOSHIKAZU
,
IWATA, MASATOSHI
Year of Publication
12.02.2015
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SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME
by
OOSHIKA YOSHIKAZU
,
MATSUURA TETSUYA
Year of Publication
20.03.2014
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NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
by
OOSHIKA
,
YOSHIKAZU
Year of Publication
02.07.2009
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SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME
by
OOSHIKA YOSHIKAZU
,
MATSUURA TETSUYA
Year of Publication
21.12.2012
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P-TYPE ALGAN LAYERM, METHOD FOR PRODUCING SAME AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
by
OOSHIKA YOSHIKAZU
,
MATSUURA TETSUYA
Year of Publication
06.09.2012
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NITRIDE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF
by
OOSHIKA YOSHIKAZU
,
MATSUURA TETSUYA
Year of Publication
16.05.2012
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NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING SAME
by
OOSHIKA YOSHIKAZU
,
OHTA YUTAKA
Year of Publication
28.09.2011
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SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME
by
OOSHIKA
,
YOSHIKAZU
,
MATSUURA, TETSUYA
Year of Publication
09.09.2011
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NITRIDE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF
by
OOSHIKA
,
YOSHIKAZU
,
MATSUURA, TETSUYA
Year of Publication
03.03.2011
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NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING SAME
by
OHTA, YUTAKA
,
OOSHIKA
,
YOSHIKAZU
Year of Publication
15.07.2010
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SEMICONDUCTOR LIGHT EMITTING ELEMENT
by
TOYOTA, TATSUNORI
,
OOSHIKA
,
YOSHIKAZU
,
KADOWAKI, YOSHITAKA
Year of Publication
09.07.2009
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III-nitride epitaxial substrate and deep ultraviolet light emitting device using the same
by
OOSHIKA
,
YOSHIKAZU
Year of Publication
24.12.2014
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III nitride epitaxial substrate and deep ultraviolet light emitting device using the same
by
OOSHIKA YOSHIKAZU
Year of Publication
03.06.2014
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III-nitride epitaxial substrate and deep ultraviolet light emiting device using the same
by
OOSHIKA
,
YOSHIKAZU
Year of Publication
07.08.2013
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III NITRIDE EPITAXIAL SUBSTRATE AND DEEP ULTRAVIOLET LIGHT EMITTING DEVICE USING THE SAME
by
OOSHIKA YOSHIKAZU
Year of Publication
18.07.2013
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III-nitride epitaxial substrate and deep ultraviolet light emitting device using the same
by
OOSHIKA
,
YOSHIKAZU
Year of Publication
17.07.2013
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III nitride semiconductor epitaxial substrate and III nitride semiconductor light emitting device, and methods of producing the same
by
Ooshika Yoshikazu
,
Iwata Masatoshi
Year of Publication
10.01.2017
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III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHODS OF PRODUCING THE SAME
by
OOSHIKA YOSHIKAZU
,
IWATA MASATOSHI
Year of Publication
16.06.2016
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Semiconductor device and method of producing the same
by
OOSHIKA YOSHIKAZU
,
MATSUURA TETSUYA
Year of Publication
17.06.2015
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