Search Results - "ONOSE Hidekatsu" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current-Voltage Characteristics of 4H-SiC Junction Barrier Schottky Diodes

Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current-Voltage Characteristics of 4H-SiC Junction Barrier Schottky Diodes

by Mochizuki, K., Kameshiro, N., Onose, H., Yokoyama, N.
Published in IEEE transactions on electron devices (01.05.2009)

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Journal Article

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

by ONOSE Hidekatsu, FURUKAWA Tomoyasu
Year of Publication 21.12.2023

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Patent

Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices

Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices

by Hirao, Takashi, Onose, Hidekatsu, Yasui, Kan, Mori, Mutsuhiro
Published in IEEE transactions on electron devices (01.07.2020)

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Journal Article

Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

by Onose, Hidekatsu, Kobayashi, Yutaka, Onuki, Jin
Published in Solid-state electronics (01.03.2017)

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Journal Article

SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION DEVICE

SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION DEVICE

by ONOSE HIDEKATSU
Year of Publication 30.10.2014

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Patent

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND POWER MODULE

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND POWER MODULE

by KAMESHIRO, Norifumi, ONOSE, Hidekatsu
Year of Publication 08.12.2016

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Patent

HIGH WITHSTANDING VOLTAGE SEMICONDUCTOR DEVICE

HIGH WITHSTANDING VOLTAGE SEMICONDUCTOR DEVICE

by MORI MUTSUHIRO, ONOSE HIDEKATSU
Year of Publication 08.02.2016

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Patent

Communication-Realization of DC Bias Reliability by 7-Zone JTE Termination Technology

Communication-Realization of DC Bias Reliability by 7-Zone JTE Termination Technology

by Onose, Hidekatsu, Yamada, Renichi, Mori, Mutsuhiro, Kobayashi, Yutaka, Onuki, Jin
Published in ECS journal of solid state science and technology (01.01.2016)

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Journal Article

A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT

A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT

by Miki, Hiroshi, Toyota, Yoshiaki, Mochizuki, Kazuhiro, Yokoyama, Natsuki, Yasui, Kan, Okino, Hiroyuki, Hasegawa, Jiro, Matsuhima, Hiroyuki, Mori, Mutsuhiro, Yamada, Renichi, Kameshiro, Norifumi, Onose, Hidekatsu, Hirao, Takashi, Oda, Tetsuo
Published in Materials Science Forum (24.05.2016)

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Journal Article

POWER SEMICONDUCTOR ELEMENT AND POWER SEMICONDUCTOR MODULE USING THE SAME

POWER SEMICONDUCTOR ELEMENT AND POWER SEMICONDUCTOR MODULE USING THE SAME

by YASUI KAN, MATSUSHIMA HIROYUKI, WAKAGI MASATOSHI, OKINO YASUYUKI, ONOSE HIDEKATSU
Year of Publication 31.08.2017

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Patent

Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices

Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices

by Morita, Toshiaki, Kato, Mitsuo, Onuki, Jin, Onose, Hidekatsu, Matsuura, Nobuyoshi, Sakurada, Shuroku
Published in Japanese Journal of Applied Physics (01.11.1999)

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Journal Article

$Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through \hbox Layers Into 4H-SiC$

Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through \hbox Layers Into 4H-SiC

by Mochizuki, Kazuhiro, Someya, Tomoyuki, Takahama, Takashi, Onose, Hidekatsu, Yokoyama, Natsuki
Published in IEEE transactions on electron devices (01.08.2008)

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Journal Article

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

by YOKOYAMA, NATSUKI, ONOSE, HIDEKATSU, MOCHIZUKI, KAZUHIRO, KAMESHIRO, NORIFUMI
Year of Publication 12.09.2014

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Patent

Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through SiO2 Layers Into 4H-SiC : Silicon carbide devices and technology

Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through SiO2 Layers Into 4H-SiC : Silicon carbide devices and technology

by MOCHIZUKI, Kazuhiro, SOMEYA, Tomoyuki, TAKAHAMA, Takashi, ONOSE, Hidekatsu, YOKOYAMA, Natsuki
Published in IEEE transactions on electron devices (2008)

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Journal Article

Characteristics of epitaxial layers grown by a new RF-induction heated hot-wall-type reactor for high-volume epitaxy

Characteristics of epitaxial layers grown by a new RF-induction heated hot-wall-type reactor for high-volume epitaxy

by INOUE, Y, ONOSE, H, SUZUKI, T
Published in Japanese Journal of Applied Physics (01.05.1990)

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Journal Article

SEMICONDUCTOR DEVICE FOR IMPROVING BLOCKING EFFECT AND REDUCING ON-RESISTANCE

SEMICONDUCTOR DEVICE FOR IMPROVING BLOCKING EFFECT AND REDUCING ON-RESISTANCE

by WATANABE ATSUO, ONOSE HIDEKATSU
Year of Publication 25.06.2004

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Patent

STORAGE-, INSULATION GATE-, AND FIELD EFFECT-TYPE TRANSISTOR

STORAGE-, INSULATION GATE-, AND FIELD EFFECT-TYPE TRANSISTOR

by YOKOYAMA, NATSUKI, ONOSE, HIDEKATSU, OKINO, HIROYUKI, OHNO, TOSHIYUKI
Year of Publication 02.09.2010

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Patent

Semiconductor device manufacturing method and semiconductor device

Semiconductor device manufacturing method and semiconductor device

by FURUKAWA, TOMOYASU, ONOSE, HIDEKATSU
Year of Publication 01.01.2024

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Patent

Semiconductor device

Semiconductor device

by ONOSE HIDEKATSU
Year of Publication 26.08.2014

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Patent

Semiconductor device having a junction FET and a MISFET for control

Semiconductor device having a junction FET and a MISFET for control

by Onose, Hidekatsu
Year of Publication 24.07.2012

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Patent

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