Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers
Onaka-Masada, Ayumi, Kadono, Takeshi, Okuyama, Ryosuke, Hirose, Ryo, Kobayashi, Koji, Suzuki, Akihiro, Koga, Yoshihiro, Kurita, Kazunari
Published in Sensors (Basel, Switzerland) (19.11.2020)
Published in Sensors (Basel, Switzerland) (19.11.2020)
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Proximity Gettering Design of Hydrocarbon⁻Molecular⁻Ion⁻Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors
Kurita, Kazunari, Kadono, Takeshi, Shigematsu, Satoshi, Hirose, Ryo, Okuyama, Ryosuke, Onaka-Masada, Ayumi, Okuda, Hidehiko, Koga, Yoshihiro
Published in Sensors (Basel, Switzerland) (04.05.2019)
Published in Sensors (Basel, Switzerland) (04.05.2019)
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Journal Article
Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers
Okuyama, Ryosuke, Masada, Ayumi, Kadono, Takeshi, Hirose, Ryo, Koga, Yoshihiro, Okuda, Hidehiko, Kurita, Kazunari
Published in Japanese Journal of Applied Physics (01.02.2017)
Published in Japanese Journal of Applied Physics (01.02.2017)
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Journal Article
Dissociation Kinetics of Trapped Hydrogen in High-dose Hydrocarbon-Molecular-Ion-Implanted Silicon during Rapid Thermal Annealing
Kadono, Takeshi, Okuyama, Ryosuke, Hirose, Ryo, Kobayashi, Koji, Onaka-Masada, Ayumi, Shigematsu, Satoshi, Koga, Yoshihiro, Okuda, Hidehiko, Fukuyama, Atsuhiko, Kurita, Kazunari
Published in E-journal of surface science and nanotechnology (30.06.2022)
Published in E-journal of surface science and nanotechnology (30.06.2022)
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Journal Article
TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface
Kobayashi, Koji, Okuyama, Ryosuke, Kadono, Takeshi, Onaka-Masada, Ayumi, Hirose, Ryo, Suzuki, Akihiro, Koga, Yoshihiro, Sueoka, Koji, Kurita, Kazunari
Published in Crystals (Basel) (01.02.2024)
Published in Crystals (Basel) (01.02.2024)
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Proximity gettering of silicon wafers using CH3O multielement molecular ion implantation technique
Hirose, Ryo, Kadono, Takeshi, Okuyama, Ryosuke, Shigematsu, Satoshi, Onaka-Masada, Ayumi, Okuda, Hidehiko, Koga, Yoshihiro, Kurita, Kazunari
Published in Japanese Journal of Applied Physics (01.09.2018)
Published in Japanese Journal of Applied Physics (01.09.2018)
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Journal Article
Proximity gettering technique using CH3O multielement molecular ion implantation for the reduction of the white spot defect density in CMOS image sensor
Hirose, Ryo, Kadono, Takeshi, Okuyama, Ryosuke, Onaka-Masada, Ayumi, Shigematsu, Satoshi, Kobayashi, Koji, Koga, Yoshihiro, Kurita, Kazunari
Published in Japanese Journal of Applied Physics (01.09.2019)
Published in Japanese Journal of Applied Physics (01.09.2019)
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Journal Article
Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers
Okuyama, Ryosuke, Masada, Ayumi, Shigematsu, Satoshi, Kadono, Takeshi, Hirose, Ryo, Koga, Yoshihiro, Okuda, Hidehiko, Kurita, Kazunari
Published in Japanese Journal of Applied Physics (01.01.2018)
Published in Japanese Journal of Applied Physics (01.01.2018)
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Journal Article
Surface Recrystallization Model of Fully Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate
Kobayashi, Koji, Okuyama, Ryosuke, Kadono, Takeshi, Onaka-Masada, Ayumi, Hirose, Ryo, Suzuki, Akihiro, Nagatomo, Sho, Koga, Yoshihiro, Sueoka, Koji, Kurita, Kazunari
Published in Crystals (Basel) (01.08.2024)
Published in Crystals (Basel) (01.08.2024)
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Journal Article
Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors
Onaka-Masada, Ayumi, Nakai, Toshiro, Okuyama, Ryosuke, Okuda, Hidehiko, Kadono, Takeshi, Hirose, Ryo, Koga, Yoshihiro, Kurita, Kazunari, Sueoka, Koji
Published in Japanese Journal of Applied Physics (01.02.2018)
Published in Japanese Journal of Applied Physics (01.02.2018)
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Journal Article
Diffusion kinetic of hydrogen in CH3O-molecular-ion-implanted silicon wafer for CMOS image sensors
Okuyama, Ryosuke, Onaka-Masada, Ayumi, Shigematsu, Satoshi, Kadono, Takeshi, Hirose, Ryo, Koga, Yoshihiro, Okuda, Hidehiko, Kurita, Kazunari
Published in Japanese Journal of Applied Physics (01.08.2018)
Published in Japanese Journal of Applied Physics (01.08.2018)
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Journal Article
Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review
Kurita, Kazunari, Kadono, Takeshi, Okuyama, Ryosuke, Onaka-Masada, Ayumi, Shigematsu, Satoshi, Hirose, Ryo, Kobayashi, Koji, Suzuki, Akihiro, Okuda, Hidehiko, Koga, Yoshihiro
Published in IEEE journal of the Electron Devices Society (2022)
Published in IEEE journal of the Electron Devices Society (2022)
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Journal Article
Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging
Onaka-Masada, Ayumi, Okuyama, Ryosuke, Nakai, Toshiro, Shigematsu, Satoshi, Okuda, Hidehiko, Kobayashi, Koji, Hirose, Ryo, Kadono, Takeshi, Koga, Yoshihiro, Shinohara, Masanori, Sueoka, Koji, Kurita, Kazunari
Published in Japanese Journal of Applied Physics (01.09.2018)
Published in Japanese Journal of Applied Physics (01.09.2018)
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Journal Article
Effect of ramping up rate on end of range defect in multielement molecular-ion (CH3O)-implanted silicon wafers
Hirose, Ryo, Onaka-Masada, Ayumi, Okuyama, Ryosuke, Kadono, Takeshi, Shigematsu, Satoshi, Kobayashi, Kouji, Suzuki, Akihiro, Koga, Yoshihiro, Matsuo, Jiro, Kurita, Kazunari
Published in Japanese Journal of Applied Physics (01.12.2019)
Published in Japanese Journal of Applied Physics (01.12.2019)
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Journal Article
Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor
Onaka-Masada, Ayumi, Okuyama, Ryosuke, Shigematsu, Satoshi, Okuda, Hidehiko, Kadono, Takeshi, Hirose, Ryo, Koga, Yoshihiro, Sueoka, Koji, Kurita, Kazunari
Published in IEEE journal of the Electron Devices Society (2018)
Published in IEEE journal of the Electron Devices Society (2018)
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