Long-read sequencing identifies the pathogenic nucleotide repeat expansion in RFC1 in a Japanese case of CANVAS
Nakamura, Haruko, Doi, Hiroshi, Mitsuhashi, Satomi, Miyatake, Satoko, Katoh, Kazutaka, Frith, Martin C, Asano, Tetsuya, Kudo, Yosuke, Ikeda, Takuya, Kubota, Shun, Kunii, Misako, Kitazawa, Yu, Tada, Mikiko, Okamoto, Mitsuo, Joki, Hideto, Takeuchi, Hideyuki, Matsumoto, Naomichi, Tanaka, Fumiaki
Published in Journal of human genetics (01.05.2020)
Published in Journal of human genetics (01.05.2020)
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Journal Article
Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices
Nakanuma, Takato, Kobayashi, Takuma, Hosoi, Takuji, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji
Published in Applied physics express (01.04.2022)
Published in Applied physics express (01.04.2022)
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Journal Article
Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors
Hosoi, Takuji, Ohsako, Momoe, Moges, Kidist, Ito, Koji, Kimoto, Tsunenobu, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji
Published in Applied physics express (01.06.2022)
Published in Applied physics express (01.06.2022)
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Journal Article
Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method
Sakata, Hiroki, Okamoto, Dai, Sometani, Mitsuru, Okamoto, Mitsuo, Hirai, Hirohisa, Harada, Shinsuke, Hatakeyama, Tetsuo, Yano, Hiroshi, Iwamuro, Noriyuki
Published in Japanese Journal of Applied Physics (01.06.2021)
Published in Japanese Journal of Applied Physics (01.06.2021)
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Journal Article
Neural mechanisms of foreign accent syndrome: Lesion and network analysis
Higashiyama, Yuichi, Hamada, Tomoya, Saito, Asami, Morihara, Keisuke, Okamoto, Mitsuo, Kimura, Katsuo, Joki, Hideto, Kishida, Hitaru, Doi, Hiroshi, Ueda, Naohisa, Takeuchi, Hideyuki, Tanaka, Fumiaki
Published in NeuroImage clinical (01.01.2021)
Published in NeuroImage clinical (01.01.2021)
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Journal Article
Dynamic characterization of the threshold voltage instability under the pulsed gate bias stress in 4H-SiC MOSFET
Okamoto, Mitsuo, Sometani, Mitsuru, Harada, Shinsuke, Yano, Hiroshi, Okumura, Hajime
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions
Sometani, Mitsuru, Okamoto, Mitsuo, Hatakeyama, Tetsuo, Iwahashi, Yohei, Hayashi, Mariko, Okamoto, Dai, Yano, Hiroshi, Harada, Shinsuke, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs
Nemoto, Hiroki, Okamoto, Dai, Zhang, Xufang, Sometani, Mitsuru, Okamoto, Mitsuo, Hatakeyama, Tetsuo, Harada, Shinsuke, Iwamuro, Noriyuki, Yano, Hiroshi
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs
Kada, Wataru, Hanaizumi, Osamu, Harada, Shinsuke, Abe, Yuta, Ohshima, Takeshi, Umeda, Takahide, Onoda, Shinobu, Haruyama, Moriyoshi, Okamoto, Mitsuo, Kosugi, Ryoji
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal--Oxide--Semiconductor Field-Effect Transistors
Okamoto, Mitsuo, Makifuchi, Youichi, Iijima, Miwako, Sakai, Yoshiyuki, Iwamuro, Noriyuki, Kimura, Hiroshi, Fukuda, Kenji, Okumura, Hajime
Published in Applied physics express (01.04.2012)
Published in Applied physics express (01.04.2012)
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Journal Article
(Invited) Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study
Umeda, Takahide, Okamoto, Mitsuo, Yoshioka, Hironori, Kim, Geon Woo, Ma, Shijie, Arai, Ryo, Makino, Takahiro, Ohshima, Takeshi, Harada, Shinsuke
Published in ECS transactions (16.08.2017)
Published in ECS transactions (16.08.2017)
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Journal Article
Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs
Sometani, Mitsuru, Iwahashi, Yohei, Okamoto, Mitsuo, Harada, Shinsuke, Yonezawa, Yoshiyuki, Okumura, Hajime, Yano, Hiroshi
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
(Invited) SiC MOS Interface States: Difference between Si Face and C Face
Umeda, Takahide, Okamoto, Mitsuo, Kosugi, Ryouji, Harada, Shinsuke, Arai, Ryo, Sato, Yoshihiro, Makino, Takahiro, Ohshima, Takeshi
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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Journal Article
The K computer Operations: Experiences and Statistics
Yamamoto, Keiji, Uno, Atsuya, Murai, Hitoshi, Tsukamoto, Toshiyuki, Shoji, Fumiyoshi, Matsui, Shuji, Sekizawa, Ryuichi, Sueyasu, Fumichika, Uchiyama, Hiroshi, Okamoto, Mitsuo, Ohgushi, Nobuo, Takashina, Katsutoshi, Wakabayashi, Daisuke, Taguchi, Yuki, Yokokawa, Mitsuo
Published in Procedia computer science (2014)
Published in Procedia computer science (2014)
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Journal Article