Green analytical method for the simultaneous analysis of cytochrome P450 probe substrates by poly(N-isopropylacrylamide)-based temperature-responsive chromatography
Maekawa, Yutaro, Okamoto, Naoya, Okada, Yuji, Nagase, Kenichi, Kanazawa, Hideko
Published in Scientific reports (01.06.2020)
Published in Scientific reports (01.06.2020)
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Journal Article
High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications
Kumazaki, Yusuke, Ozaki, Shiro, Nakasha, Yasuhiro, Okamoto, Naoya, Yamada, Atsushi, Ohki, Toshihiro
Published in Applied physics express (01.08.2024)
Published in Applied physics express (01.08.2024)
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Journal Article
Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures
Kawaguchi, Kenichi, Takahashi, Tsuyoshi, Okamoto, Naoya, Sato, Masaru
Published in Physica status solidi. A, Applications and materials science (21.04.2018)
Published in Physica status solidi. A, Applications and materials science (21.04.2018)
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Journal Article
Oxidation during magma mixing recorded by symplectites at Kusatsu–Shirane Volcano, Central Japan
Ueki, Kenta, Inui, Mutsuko, Matsunaga, Kenta, Okamoto, Naoya, Oshio, Kazuki
Published in Earth, planets, and space (13.05.2020)
Published in Earth, planets, and space (13.05.2020)
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Journal Article
Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs
Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Yamada, Atsushi, Makiyama, Kozo, Kotani, Junji, Ozaki, Shiro, Sato, Masaru, Nakamura, Norikazu
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers
Kotani, Junji, Makiyama, Kozo, Ohki, Toshihiro, Ozaki, Shiro, Okamoto, Naoya, Minoura, Yuichi, Sato, Masaru, Nakamura, Norikazu, Miyamoto, Yasuyuki
Published in Electronics letters (01.02.2023)
Published in Electronics letters (01.02.2023)
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Journal Article
Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires
Takahashi, Tsuyoshi, Kawaguchi, Kenichi, Sato, Masaru, Suhara, Michihiko, Okamoto, Naoya
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven
Okamoto, Naoya, Sato, Masaru, Nishimori, Masato, Kumazaki, Yusuke, Ohki, Toshihiro, Hara, Naoki, Watanabe, Keiji
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01.11.2021)
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01.11.2021)
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Periodic sea-level oscillation in Tokyo Bay detected with the Tokyo-Bay seafloor hyper-kilometric submarine deep detector (TS-HKMSDD)
M Tanaka, Hiroyuki K, Aichi, Masaatsu, Balogh, Szabolcs József, Bozza, Cristiano, Coniglione, Rosa, Gluyas, Jon, Hayashi, Naoto, Holma, Marko, Joutsenvaara, Jari, Kamoshida, Osamu, Kato, Yasuhiro, Kin, Tadahiro, Kuusiniemi, Pasi, Leone, Giovanni, Lo Presti, Domenico, Matsushima, Jun, Miyamoto, Hideaki, Mori, Hirohisa, Nomura, Yukihiro, Okamoto, Naoya, Oláh, László, Steigerwald, Sara, Shimazoe, Kenji, Sumiya, Kenji, Takahashi, Hiroyuki, Thompson, Lee F, Tokunaga, Tomochika, Yokota, Yusuke, Paling, Sean, Varga, Dezső
Published in Scientific reports (12.04.2022)
Published in Scientific reports (12.04.2022)
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Journal Article
First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm −1 output power density
Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Kumazaki, Yusuke, Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Nakamura, Norikazu, Kotani, Junji
Published in Applied physics express (01.04.2021)
Published in Applied physics express (01.04.2021)
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Journal Article
Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates
Kumazaki, Yusuke, Ohki, Toshihiro, Kotani, Junji, Ozaki, Shiro, Niida, Yoshitaka, Minoura, Yuichi, Nishimori, Masato, Okamoto, Naoya, Sato, Masaru, Nakamura, Norikazu, Watanabe, Keiji
Published in Applied physics express (01.01.2021)
Published in Applied physics express (01.01.2021)
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Journal Article
Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3
Ozaki, Shiro, Makiyama, Kozo, Ohki, Toshihiro, Okamoto, Naoya, Kaneki, Shota, Nishiguchi, Kenya, Hara, Naoki, Hashizume, Tamotsu
Published in Applied physics express (01.06.2017)
Published in Applied physics express (01.06.2017)
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Journal Article
Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors
Ozaki, Shiro, Ohki, Toshihiro, Kanamura, Masahito, Okamoto, Naoya, Kikkawa, Toshihide
Published in Japanese Journal of Applied Physics (01.11.2013)
Published in Japanese Journal of Applied Physics (01.11.2013)
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Journal Article
Wavelet-based regularization of the Galerkin truncated three-dimensional incompressible Euler flows
Farge, Marie, Okamoto, Naoya, Schneider, Kai, Yoshimatsu, Katsunori
Published in Physical review. E (01.12.2017)
Published in Physical review. E (01.12.2017)
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