Identification of type of threading dislocation causing reverse leakage in GaN p-n junctions after continuous forward current stress
Narita, Tetsuo, Kanechika, Masakazu, Kojima, Jun, Watanabe, Hiroki, Kondo, Takeshi, Uesugi, Tsutomu, Yamaguchi, Satoshi, Kimoto, Yasuji, Tomita, Kazuyoshi, Nagasato, Yoshitaka, Ikeda, Satoshi, Kosaki, Masayoshi, Oka, Tohru, Suda, Jun
Published in Scientific reports (27.01.2022)
Published in Scientific reports (27.01.2022)
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Journal Article
A High-Power Low-Distortion GaAs HBT Power Amplifier for Mobile Terminals Used in Broadband Wireless Applications
Oka, T., Hasegawa, M., Hirata, M., Amano, Y., Ishimaru, Y., Kawamura, H., Sakuno, K.
Published in IEEE journal of solid-state circuits (01.10.2007)
Published in IEEE journal of solid-state circuits (01.10.2007)
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Journal Article
Conference Proceeding
100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer
Oka, Tohru, Ina, Tsutomu, Ueno, Yukihisa, Nishii, Junya
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate
Oka, Tohru, Ina, Tsutomu, Ueno, Yukihisa, Nishii, Junya
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Fully strained heavily carbon-doped GaAs grown by gas-source molecular beam epitaxy using carbontetrabromide and its application to InGaP/GaAs heterojunction bipolar transistors
OUCHI, K, MISHIMA, T, MOCHIZUKI, K, OKA, T, TANOUE, T
Published in Japanese Journal of Applied Physics (01.03.1997)
Published in Japanese Journal of Applied Physics (01.03.1997)
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Conference Proceeding
Journal Article
Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO 2 Deposited at 300°C by Remote Plasma Technique
Fuyuki, Takashi, Tohru Oka, Tohru Oka, Hiroyuki Matsunami, Hiroyuki Matsunami
Published in Japanese Journal of Applied Physics (01.01.1994)
Published in Japanese Journal of Applied Physics (01.01.1994)
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Journal Article
Reliability issues of gate oxides and p-n junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited)
Narita, Tetsuo, Kikuta, Daigo, Ito, Kenji, Shoji, Tomoyuki, Mori, Tomohiko, Yamaguchi, Satoshi, Kimoto, Yasuji, Tomita, Kazuyoshi, Kanechika, Masakazu, Kondo, Takeshi, Uesugi, Tsutomu, Kojima, Jun, Suda, Jun, Nagasato, Yoshitaka, Ikeda, Satoshi, Watanabe, Hiroki, Kosaki, Masayoshi, Oka, Tohru
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
A WSi base electrode and a heavily-doped thin base layer for high-speed and low-power InGaP/GaAs HBTs
OKA, T, OUCHI, K, MOCHIZUKI, K, NAKAMURA, T
Published in Japanese Journal of Applied Physics (01.03.1997)
Published in Japanese Journal of Applied Physics (01.03.1997)
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Conference Proceeding
Journal Article
Recent topics of vertical GaN power devices
Oka, Tohru
Published in 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) (01.06.2017)
Published in 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) (01.06.2017)
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Conference Proceeding