DIAMOND CONTACT STRUCTURE AND ELECTRONIC ELEMENT USING THE SAME
OISHI TOSHIYUKI, KAKAZU MAKOTO, SHIRAISHI KENJI, MIYAZAKI SEIICHI, OSHIMA TAKAHITO
Year of Publication 01.03.2018
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Year of Publication 01.03.2018
Patent
A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
Sugihara, Kohei, Miura, Naruhisa, Furukawa, Taisuke, Nakahata, Takumi, Oishi, Toshiyuki, Maruno, Shigemitsu, Abe, Yuji, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (2001)
Published in Japanese Journal of Applied Physics (2001)
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Journal Article
Formation of indium–tin oxide ohmic contacts for β-Ga 2 O 3
Oshima, Takayoshi, Wakabayashi, Ryo, Hattori, Mai, Hashiguchi, Akihiro, Kawano, Naoto, Sasaki, Kohei, Masui, Takekazu, Kuramata, Akito, Yamakoshi, Shigenobu, Yoshimatsu, Kohei, Ohtomo, Akira, Oishi, Toshiyuki, Kasu, Makoto
Published in Japanese Journal of Applied Physics (01.12.2016)
Published in Japanese Journal of Applied Physics (01.12.2016)
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Journal Article
Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts
Nanjo, Takuma, Motoya, Tsukasa, Imai, Akihumi, Suzuki, Yosuke, Shiozawa, Katsuomi, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (01.06.2011)
Published in Japanese Journal of Applied Physics (01.06.2011)
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Journal Article
Narrow-channel metal oxide semiconductor field effect transistor (MOSFET) isolated by an ultra-fine trench
OISHI, T, SHIOZAWA, K, FURUKAWA, A, ABE, Y, TOKUDA, Y
Published in Japanese Journal of Applied Physics (01.05.1997)
Published in Japanese Journal of Applied Physics (01.05.1997)
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Journal Article
Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process
SHIOZAWA, K, OISHI, T, MAEDA, H, MURAKAMI, T.-A, YASUMURA, K, ABE, Y, TOKUDA, Y
Published in Japanese Journal of Applied Physics (01.12.1996)
Published in Japanese Journal of Applied Physics (01.12.1996)
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Journal Article
TRANSISTOR AND MANUFACTURING METHOD THEREFOR
YAMAGUCHI YUTARO, OISHI TOSHIYUKI, OTSUKA HIROSHI, YAMANAKA KOJI, UCHIDA HIROMITSU
Year of Publication 16.04.2015
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Year of Publication 16.04.2015
Patent
Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
Nanjo, Takuma, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori
Published in Applied physics express (01.03.2009)
Published in Applied physics express (01.03.2009)
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Journal Article
CASCODE CONNECTION POWER DEVICE
KOHAMA TATSUO, YAMAGUCHI YUTARO, OISHI TOSHIYUKI, OTSUKA HIROSHI, YAMANAKA KOJI
Year of Publication 17.11.2014
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Year of Publication 17.11.2014
Patent
TRANSISTOR USING NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME
OISHI, TOSHIYUKI, OTSUKA, HIROSHI, YAMANAKA, KOJI, YAMAGUCHI, YUTARO, NAKAYAMA, MASATOSHI
Year of Publication 24.10.2013
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Year of Publication 24.10.2013
Patent
Effect of ethane addition to argon in etching of BiSrCaCuO superconducting thin films
OISHI, T, TAKAMI, T, KOJIMA, K, KURODA, K, WADA, O
Published in Japanese Journal of Applied Physics (01.02.1993)
Published in Japanese Journal of Applied Physics (01.02.1993)
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Journal Article
Reactive ion etching of BiSrCaCuO superconducting thin films using ethane and oxygen
OISHI, T, TAKAMI, T, KURODA, K, KOJIMA, K, WADA, O, NUNOSHITA, M
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Journal Article