Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs
Saha, Niloy Chandra, Shiratsuchi, Tomoki, Oishi, Toshiyuki, Kasu, Makoto
Published in IEEE electron device letters (01.10.2023)
Published in IEEE electron device letters (01.10.2023)
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Journal Article
Stable AC Stress Operation (100 h) of NO 2 p-Type Doped Diamond MOSFETs
Saha, Niloy Chandra, Shiratsuchi, Tomoki, Oishi, Toshiyuki, Kasu, Makoto
Published in IEEE electron device letters (01.10.2023)
Published in IEEE electron device letters (01.10.2023)
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Journal Article
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
Nanjo, Takuma, Miura, Naruhisa, Oishi, Toshiyuki, Suita, Muneyoshi, Abe, Yuji, Ozeki, Tatsuo, Nakatsuka, Shigenori, Inoue, Akira, Ishikawa, Takahide, Matsuda, Yoshio, Ishikawa, Hiroyasu, Egawa, Takashi
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Carrier confinement observed at modulation-doped β-(AlxGa1−x)2O3/Ga2O3 heterojunction interface
Oshima, Takayoshi, Kato, Yuji, Kawano, Naoto, Kuramata, Akito, Yamakoshi, Shigenobu, Fujita, Shizuo, Oishi, Toshiyuki, Kasu, Makoto
Published in Applied physics express (01.03.2017)
Published in Applied physics express (01.03.2017)
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Journal Article
3326-V Modulation-Doped Diamond MOSFETs
Saha, Niloy Chandra, Kim, Seong-Woo, Oishi, Toshiyuki, Kasu, Makoto
Published in IEEE electron device letters (01.08.2022)
Published in IEEE electron device letters (01.08.2022)
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Journal Article
Microwave Power Rectification Using \beta -Ga2O3 Schottky Barrier Diodes
Oishi, Toshiyuki, Urata, Kosuke, Hashikawa, Makoto, Ajiro, Kosuke, Oshima, Takayoshi
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
Long Stress (190 h) Operation of NO 2 p-Type Doped Diamond MOSFETs
Saha, Niloy Chandra, Shiratsuchi, Tomoki, Kim, Seong-Woo, Koyama, Koji, Oishi, Toshiyuki, Kasu, Makoto
Published in IEEE electron device letters (01.06.2023)
Published in IEEE electron device letters (01.06.2023)
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Journal Article
X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
Nanjo, Takuma, Kawase, Kazumasa, Suita, Muneyoshi, Abe, Yuji, Oishi, Toshiyuki, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (01.06.2007)
Published in Japanese Journal of Applied Physics (01.06.2007)
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Journal Article
Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations
Nishida, Taiki, Oishi, Toshiyuki, Otsuka, Tomohiro, Yamaguchi, Yutaro, Tsuru, Masaomi, Yamanaka, Koji
Published in Solid-state electronics (01.03.2023)
Published in Solid-state electronics (01.03.2023)
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Journal Article
Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs
Saha, Niloy Chandra, Shiratsuchi, Tomoki, Kim, Seong-Woo, Koyama, Koji, Oishi, Toshiyuki, Kasu, Makoto
Published in IEEE electron device letters (01.06.2023)
Published in IEEE electron device letters (01.06.2023)
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Journal Article
Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects
Oshima, Takayoshi, Hashiguchi, Akihiro, Moribayashi, Tomoya, Koshi, Kimiyoshi, Sasaki, Kohei, Kuramata, Akito, Ueda, Osamu, Oishi, Toshiyuki, Kasu, Makoto
Published in Japanese Journal of Applied Physics (01.08.2017)
Published in Japanese Journal of Applied Physics (01.08.2017)
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Journal Article
Microwave Power Rectification Using $\beta$ -Ga 2 O 3 Schottky Barrier Diodes
Oishi, Toshiyuki, Urata, Kosuke, Hashikawa, Makoto, Ajiro, Kosuke, Oshima, Takayoshi
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
Fabrication of diamond modulation-doped FETs by NO 2 delta doping in an Al 2 O 3 gate layer
Kasu, Makoto, Saha, Niloy Chandra, Oishi, Toshiyuki, Kim, Seong-Woo
Published in Applied physics express (01.05.2021)
Published in Applied physics express (01.05.2021)
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Journal Article
Stability of diamond/Si bonding interface during device fabrication process
Liang, Jianbo, Masuya, Satoshi, Kim, Seongwoo, Oishi, Toshiyuki, Kasu, Makoto, Shigekawa, Naoteru
Published in Applied physics express (01.01.2019)
Published in Applied physics express (01.01.2019)
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