Fabrication of Thin-Film, Flexible, and Transparent Electrodes Composed of Ruthenic Acid Nanosheets by Electrophoretic Deposition and Application to Electrochemical Capacitors
Sugimoto, Wataru, Yokoshima, Katsunori, Ohuchi, Kazunori, Murakami, Yasushi, Takasu, Yoshio
Published in Journal of the Electrochemical Society (2006)
Published in Journal of the Electrochemical Society (2006)
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Journal Article
A new reverse base current (RBC) of the bipolar transistor induced by impact ionization
SAKUI, K, HASEGAWA, T, FUSE, T, SESHITA, T, ARITOME, S, WATANABE, S, OHUCHI, K, MASUOKA, F
Published in Japanese Journal of Applied Physics (01.12.1989)
Published in Japanese Journal of Applied Physics (01.12.1989)
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Journal Article
Ruthenic Acid Nanosheet Electrodes and Micro-Supercapacitors Prepared by Electrophoretic Deposition
Sugimoto, Wataru, Ohuchi, Kazunori, Yokoshima, Katsunori, Park, Jong-Eun, Momma, Toshiyuki, Osaka, Tetsuya, Takasu, Yoshio
Published in Meeting abstracts (Electrochemical Society) (17.02.2006)
Published in Meeting abstracts (Electrochemical Society) (17.02.2006)
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Journal Article
A quick intelligent page-programming architecture and a shielded bitline sensing method for 3 V-only NAND flash memory
Tanaka, T., Tanaka, Y., Nakamura, H., Sakui, K., Oodaira, H., Shirota, R., Ohuchi, K., Masuoka, F., Hara, H.
Published in IEEE journal of solid-state circuits (01.11.1994)
Published in IEEE journal of solid-state circuits (01.11.1994)
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Journal Article
A compact on-chip ECC for low cost flash memories
Tanzawa, T., Tanaka, T., Takeuchi, K., Shirota, R., Aritome, S., Watanabe, H., Hemink, G., Shimizu, K., Sato, S., Takeuchi, Y., Ohuchi, K.
Published in IEEE journal of solid-state circuits (01.05.1997)
Published in IEEE journal of solid-state circuits (01.05.1997)
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Journal Article
A novel circuit technology with surrounding gate transistors (SGT's) for ultra high density DRAM's
Watanabe, S., Tsuchida, K., Takashima, D., Oowaki, Y., Nitayama, A., Hieda, K., Takato, H., Sunouchi, K., Horiguchi, F., Ohuchi, K., Masuoka, F., Hara, H.
Published in IEEE journal of solid-state circuits (01.09.1995)
Published in IEEE journal of solid-state circuits (01.09.1995)
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Journal Article
Noise suppression scheme for gigabit-scale and gigabyte/s data-rate LSI's
Takashima, D., Oowaki, Y., Watanabe, S., Ohuchi, K.
Published in IEEE journal of solid-state circuits (01.02.1998)
Published in IEEE journal of solid-state circuits (01.02.1998)
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Journal Article
A 0.5 V 200 MHz 1-stage 32 b ALU using a body bias controlled SOI pass-gate logic
Fuse, T., Oowaki, Y., Yamada, T., Kamoshida, M., Ohta, A., Shino, T., Kawanaka, S., Terauchi, M., Yoshida, T., Matsubara, G., Yoshioka, S., Watanabe, S., Yoshimi, M., Ohuchi, K., Manabe, S.
Published in 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers (01.01.1997)
Published in 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers (01.01.1997)
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A 4-Mb NAND EEPROM with tight programmed Vt distribution
MOMODOMI, M, TANAKA, T, IWATA, Y, TANAKA, Y, OODAIRA, H, ITOH, Y, SHIROTA, R, OHUCHI, K, MASUOKA, F
Published in IEEE journal of solid-state circuits (01.04.1991)
Published in IEEE journal of solid-state circuits (01.04.1991)
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Journal Article
A 33-ns 64-Mb DRAM
Oowaki, Y., Tsuchida, K., Watanabe, Y., Takashima, D., Ohta, M., Nakano, H., Watanabe, S., Nitayama, A., Horiguchi, F., Ohuchi, K., Masuoka, F.
Published in IEEE journal of solid-state circuits (01.11.1991)
Published in IEEE journal of solid-state circuits (01.11.1991)
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Journal Article
An experimental 4-Mbit CMOS EEPROM with a NAND-structured cell
Momodomi, M., Itoh, Y., Shirota, R., Iwata, Y., Nakayama, R., Kirisawa, R., Tanaka, T., Aritome, S., Endoh, T., Ohuchi, K., Masuoka, F.
Published in IEEE journal of solid-state circuits (01.10.1989)
Published in IEEE journal of solid-state circuits (01.10.1989)
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Journal Article
A new static memory cell based on the reverse base current effect of bipolar transistors
Sakui, K., Hasegawa, T., Fuse, T., Watanabe, S., Ohuchi, K., Masuoka, F.
Published in IEEE transactions on electron devices (01.06.1989)
Published in IEEE transactions on electron devices (01.06.1989)
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