Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals
Nakai, Katsuhiko, Inoue, Yoshiharu, Yokota, Hideki, Ikari, Atsushi, Takahashi, Jun, Tachikawa, Akiyoshi, Kitahara, Kouichi, Ohta, Yasumitsu, Ohashi, Wataru
Published in Journal of applied physics (15.04.2001)
Published in Journal of applied physics (15.04.2001)
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Journal Article
Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II) –Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping
Nakai, Katsuhiko, Kitahara, Koichi, Ohta, Yasumitsu, Ikari, Atsushi, Tanaka, Masahiro
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) –Investigation of the Crystallographic Structure
Nakai, Katsuhiko, Kitahara, Koichi, Ohta, Yasumitsu, Ikari, Atsushi, Tanaka, Masahiro
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Effect of SiO[sub 2] Thickness on Dielectric Breakdown Defect Density Due to Surface Crystal-Originated Particles
Yamabe, Kikuo, Shimada, Yasuhiro, Piao, Min, Yamazaki, Tohru, Otsuki, Tsuyoshi, Takeda, Ryuji, Ohta, Yasumitsu, Jimbo, Susumu, Watanabe, Masaharu
Published in Journal of the Electrochemical Society (2003)
Published in Journal of the Electrochemical Society (2003)
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Journal Article
Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs–Si Interface
Aigo, Takashi, Fujita, Yasuhisa, Tachikawa, Akiyoshi, Ohta, Yasumitsu
Published in Japanese Journal of Applied Physics (01.05.1999)
Published in Japanese Journal of Applied Physics (01.05.1999)
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Photoluminescence in hydrogenated amorphous carbon films prepared at room temperature
OHTANI, N, KATSUNO, M, FUTAGI, T, OHTA, Y, MIMURA, H, KAWAMURA, K
Published in Japanese Journal of Applied Physics (01.09.1991)
Published in Japanese Journal of Applied Physics (01.09.1991)
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Journal Article
Effect of SiO2 thickness on dielectric breakdown defect density due to surface crystal-originated particles
YAMABE, Kikuo, SHIMADA, Yasuhiro, MIN PIAO, YAMAZAKI, Tohru, OTSUKI, Tsuyoshi, TAKEDA, Ryuji, OHTA, Yasumitsu, JIMBO, Susumu, WATANABE, Masaharu
Published in Journal of the Electrochemical Society (01.03.2003)
Published in Journal of the Electrochemical Society (01.03.2003)
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A small-signal linear equivalent circuit of HEMTs fabricated on GaAs-on-Si wafers
Goto, M, Ohta, Y, Aigo, T, Moritani, A
Published in IEEE transactions on microwave theory and techniques (01.05.1996)
Published in IEEE transactions on microwave theory and techniques (01.05.1996)
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Journal Article
A two-dimensional image sensor with aSi:H pin diodes
Mimura, Hidenori, Sai, Kazuyoshi, Ohta, Yasumitsu, Yamamoto, Kazuo, Kitamura, Koich
Published in Applied surface science (01.01.1991)
Published in Applied surface science (01.01.1991)
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Journal Article
Preparation of μc-SiC and its application for light emitting diodes
Mimura, Hidenori, Futagi, Toshiro, Matsumoto, Takahiro, Katsuno, Masakazu, Ohta, Yasumitsu, Kitamura, Koich
Published in Applied surface science (01.03.1993)
Published in Applied surface science (01.03.1993)
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Journal Article
Conference Proceeding
Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates
Aigo, T., Goto, M., Ohta, Y., Jono, A., Tachikawa, A., Moritani, A.
Published in IEEE transactions on electron devices (01.04.1996)
Published in IEEE transactions on electron devices (01.04.1996)
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Journal Article
p-Type μc-SiC prepared by ECR PECVD using tetramethylsilane gas
Katsuno, Masakazu, Futagi, Toshiro, Ohta, Yasumitsu, Mimura, Hidenori, Kitamura, Koich
Published in Applied surface science (01.01.1993)
Published in Applied surface science (01.01.1993)
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Journal Article
Conference Proceeding
A two-dimensional image sensor with a Si:H pin diodes
Mimura, Hidenori, Sai, Kazuyoshi, Ohta, Yasumitsu, Yamamoto, Kazuo, Kitamura, Koich
Published in Applied surface science (1991)
Published in Applied surface science (1991)
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Journal Article
Conference Proceeding
Complete-contact type image sensor
SAI; KAZUYOSHI, KITAMURA; KOICHI, YAMAMOTO; KAZUO, MIMURA; HIDENORI, OHTA; YASUMITSU
Year of Publication 01.06.1993
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Year of Publication 01.06.1993
Patent
PHOTOELECTRIC CONVERSION DEVICE
SAWAFUJI; TAKASHI, KITAMURA; KOICHI, KAWASAKI; ATSUSHI, MIMURA; HIDENORI, OHTA; YASUMITSU
Year of Publication 02.03.1993
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Year of Publication 02.03.1993
Patent
Full contact image sensor device with light blocking means
SAI; KAZUYOSHI, KITAMURA; KOICHI, YAMAMOTO; KAZUO, MIMURA; HIDENORI, OHTA; YASUMITSU
Year of Publication 22.09.1992
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Year of Publication 22.09.1992
Patent
Method and apparatus for driving image sensor device
SAI; KAZUYOSHI, KITAMURA; KOICHI, YAMAMOTO; KAZUO, MIMURA; HIDENORI, OHTA; YASUMITSU
Year of Publication 18.08.1992
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Year of Publication 18.08.1992
Patent