Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry
Matsuhata, Hirofumi, Yamaguchi, Hirotaka, Ohno, Toshiyuki
Published in Philosophical magazine (Abingdon, England) (21.12.2012)
Published in Philosophical magazine (Abingdon, England) (21.12.2012)
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Journal Article
Reducing warpage of thick 4H-SiC epitaxial layers by grinding the back of the substrate
Masumoto, Keiko, Segawa, Satoshi, Ohno, Toshiyuki, Tsukimoto, Susumu, Kojima, Kazutoshi, Kato, Tomohisa, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition
Masumoto, Keiko, Kudou, Chiaki, Tamura, Kentaro, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime
Published in Journal of crystal growth (15.10.2013)
Published in Journal of crystal growth (15.10.2013)
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Journal Article
Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
Masumoto, Keiko, Asamizu, Hirokuni, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime
Published in Materials (17.10.2014)
Published in Materials (17.10.2014)
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Journal Article
Influence of Epi-Layer Growth Pits on SiC Device Characteristics
Kudou, Chiaki, Tamura, Kentaro, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Asamizu, Hirokuni, Masumoto, Keiko
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-Ray Topography
MATSUHATA, HIROHUMI, YAMAGUCHI, HIROTAKA, SEKIGUCHI, TAKASHI, CHEN, BIN, SASAKI, MASAYUKI, OHNO, TOSHIYUKI, SUZUKI, TAKUMA, HATAKEYAMA, TETSUO, TSUJI, TAKASHI, YONEZAWA, YOSHIYUKI, ARAI, KAZUO
Published in Electrical engineering in Japan (01.11.2016)
Published in Electrical engineering in Japan (01.11.2016)
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Journal Article
Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC
Kudou, Chiaki, Ohno, Toshiyuki, Tamura, Kentaro, Nishio, Johji, Kojima, Kazutoshi, Ito, Sachiko, Asamizu, Hirokuni, Masumoto, Keiko
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
De novo CD5‐positive diffuse large B‐cell lymphoma: clinical characteristics and therapeutic outcome
Yamaguchi, Motoko, Ohno, Toshiyuki, Oka, Kouji, Taniguchi, Masanori, Ito, Motohiro, Kita, Kenkichi, Shiku, Hiroshi
Published in British journal of haematology (01.06.1999)
Published in British journal of haematology (01.06.1999)
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Journal Article
Clinicopathologic significance of loss of CD19 expression in diffuse large B-cell lymphoma
KIMURA, Miho, YAMAGUCHI, Motoko, KOBAYASHI, Tohru, SHIKU, Hiroshi, NAKAMURA, Shigeo, IMAI, Hiroshi, UENO, Satoshi, OGAWA, Shoko, MIYAZAKI, Kana, OKA, Kouji, OHNO, Toshiyuki, KITA, Kenkichi
Published in International journal of hematology (01.01.2007)
Published in International journal of hematology (01.01.2007)
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Journal Article
Analysis of clonal relationship using single-cell polymerase chain reaction in a patient with concomitant mantle cell lymphoma and multiple myeloma
YAMAGUCHI, Motoko, OHNO, Toshiyuki, MIYATA, Eri, TOYODA, Hideki, NISHII, Kazuhiro, MASUYA, Masahiro, KITA, Kenkichi, SHIKU, Hiroshi
Published in International journal of hematology (01.04.2001)
Published in International journal of hematology (01.04.2001)
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Journal Article
Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle
Masumoto, Keiko, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime
Published in Journal of crystal growth (01.09.2014)
Published in Journal of crystal growth (01.09.2014)
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Journal Article
Conference Proceeding
In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor
Mizuno, Kosuke, Habuka, Hitoshi, Ishida, Yuuki, Ohno, Toshiyuki
Published in ECS journal of solid state science and technology (01.01.2015)
Published in ECS journal of solid state science and technology (01.01.2015)
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Journal Article
14 year-old female with lupus nephritis, thinking about treatments from this case
Shimizu, Mamiko, Ohno, Toshiyuki, Tanaka, Hidenori, Katou, Daisuke, Iwata, Naoyuki
Published in Japanese journal of pediatric nephrology (15.11.2005)
Published in Japanese journal of pediatric nephrology (15.11.2005)
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Journal Article
Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle
Masumoto, Keiko, Asamizu, Hirokuni, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Erratum to “Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition” [J. Cryst. Growth 381 (2013) 139–143]
Masumoto, Keiko, Kudou, Chiaki, Tamura, Kentaro, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime
Published in Journal of crystal growth (15.11.2013)
Published in Journal of crystal growth (15.11.2013)
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Journal Article