New era of silicon technologies due to radical reaction based semiconductor manufacturing
Ohmi, Tadahiro, Hirayama, Masaki, Teramoto, Akinobu
Published in Journal of physics. D, Applied physics (07.01.2006)
Published in Journal of physics. D, Applied physics (07.01.2006)
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Journal Article
High Quality SiO2/Al2O3 Gate Stack for GaN Metal--Oxide--Semiconductor Field-Effect Transistor
Kambayashi, Hiroshi, Nomura, Takehiko, Ueda, Hirokazu, Harada, Katsushige, Morozumi, Yuichiro, Hasebe, Kazuhide, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro
Published in Jpn J Appl Phys (25.04.2013)
Published in Jpn J Appl Phys (25.04.2013)
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Journal Article
Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs
Kuroda, R., Suwa, T., Teramoto, A., Hasebe, R., Sugawa, S., Ohmi, T.
Published in IEEE transactions on electron devices (01.02.2009)
Published in IEEE transactions on electron devices (01.02.2009)
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Journal Article
Low-Interface-Trap-Density and High-Breakdown-Electric-Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition
Watanabe, T., Teramoto, A., Nakao, Y., Sugawa, S., Ohmi, T.
Published in IEEE transactions on electron devices (01.06.2013)
Published in IEEE transactions on electron devices (01.06.2013)
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Journal Article
Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal-oxide-semiconductor field-effect transistors
Obara, Toshiki, Yonezawa, Akihiro, Teramoto, Akinobu, Kuroda, Rihito, Sugawa, Shigetoshi, Ohmi, Tadahiro
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
Dependence of the Decomposition of Trimethylaluminum on Oxygen Concentration
Yamashita, Satoru, Watanuki, Kohei, Ishii, Hidekazu, Shiba, Yoshinobu, Kitano, Masafumi, Shirai, Yasuyuki, Sugawa, Shigetoshi, Ohmi, Tadahiro
Published in Journal of the Electrochemical Society (2011)
Published in Journal of the Electrochemical Society (2011)
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Journal Article
Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering
Ishii, Hidekazu, Takahashi, Kentaro, Goto, Tetsuya, Sugawa, Shigetoshi, Ohmi, Tadahiro
Published in ECS transactions (20.07.2015)
Published in ECS transactions (20.07.2015)
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Journal Article
Tribological Study of Brush Scrubbing in Post-Chemical Mechanical Planarization Cleaning in Non-porous Ultralow-k Dielectric∕Cu Interconnects
Gu, Xun, Nemoto, Takenao, Teramoto, Akinobu, Sakuragi, Misa, Sugawa, Shigetoshi, Ohmi, Tadahiro
Published in Journal of the Electrochemical Society (2011)
Published in Journal of the Electrochemical Society (2011)
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Journal Article
Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal-insulator-silicon field-effect transistors
Kuroda, Rihito, Nakao, Yukihisa, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
Formation speed of atomically flat surface on Si (1 0 0) in ultra-pure argon
Li, Xiang, Teramoto, Akinobu, Suwa, Tomoyuki, Kuroda, Rihito, Sugawa, Shigetoshi, Ohmi, Tadahiro
Published in Microelectronic engineering (01.10.2011)
Published in Microelectronic engineering (01.10.2011)
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Journal Article
Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma
Suwa, Tomoyuki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro
Published in ECS transactions (24.03.2014)
Published in ECS transactions (24.03.2014)
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Journal Article
Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
Teramoto, A., Hamada, T., Yamamoto, M., Gaubert, P., Akahori, H., Nii, K., Hirayama, M., Arima, K., Endo, K., Sugawa, S., Ohmi, T.
Published in IEEE transactions on electron devices (01.06.2007)
Published in IEEE transactions on electron devices (01.06.2007)
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Journal Article
Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition
Asahara, Hirokazu, Takamizu, Daiju, Inokuchi, Atsutoshi, Hirayama, Masaki, Teramoto, Akinobu, Saito, Shin, Takahashi, Migaku, Ohmi, Tadahiro
Published in Thin solid films (31.03.2010)
Published in Thin solid films (31.03.2010)
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Journal Article
Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers
Goto, Tetsuya, Kuroda, Rihito, Akagawa, Naoya, Suwa, Tomoyuki, Teramoto, Akinobu, Li, Xiang, Obara, Toshiki, Kimoto, Daiki, Sugawa, Shigetoshi, Ohmi, Tadahiro, Kamata, Yutaka, Kumagai, Yuki, Shibusawa, Katsuhiko
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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