Improving the specific on-resistance and short-circuit ruggedness tradeoff of 1.2-kV-class SBD-embedded SiC MOSFETs through cell pitch reduction and internal resistance optimization
Kono, Hiroshi, Asaba, Shunsuke, Ohashi, Teruyuki, Ogata, Takahiro, Furukawa, Masaru, Sano, Kenya, Yamaguchi, Masakazu, Suzuki, Hisashi
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
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Conference Proceeding
Experimental Study on Deformation Potential ( }} ) in MOSFETs: Demonstration of Increased }} at MOS Interfaces and Its Impact on Electron Mobility
Ohashi, Teruyuki, Tanaka, Takahisa, Takahashi, Tsunaki, Oda, Shunri, Uchida, Ken
Published in IEEE journal of the Electron Devices Society (01.09.2016)
Published in IEEE journal of the Electron Devices Society (01.09.2016)
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Journal Article
Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
Kadotani, Naotoshi, Ohashi, Teruyuki, Takahashi, Tsunaki, Oda, Shunri, Uchida, Ken
Published in Japanese Journal of Applied Physics (01.09.2011)
Published in Japanese Journal of Applied Physics (01.09.2011)
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Journal Article
Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
Kadotani, Naotoshi, Ohashi, Teruyuki, Takahashi, Tsunaki, Oda, Shunri, Uchida, Ken
Published in Japanese Journal of Applied Physics (01.09.2011)
Published in Japanese Journal of Applied Physics (01.09.2011)
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Journal Article