Search Results - "OH, Yongchul" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Protruding gate transistor and method of producing same

Protruding gate transistor and method of producing same

by Oh, Yongchul, Yoon, Kyeongill
Year of Publication 31.05.2022

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Patent

Method of fabricating semiconductor device

Method of fabricating semiconductor device

by Oh, Yongchul, Ahn, Woo-Song
Year of Publication 22.02.2022

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Patent

Semiconductor component and method for fabricating the same

Semiconductor component and method for fabricating the same

by Kim, Deok-Yong, Oh, Yongchul
Year of Publication 26.10.2021

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Patent

Semiconductor device having active region and method for fabricating the same

Semiconductor device having active region and method for fabricating the same

by Kim, Deok-Yong, Oh, Yongchul
Year of Publication 28.09.2021

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Patent

Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology

Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology

by Youngseung Cho, Yoosang Hwang, Huijung Kim, Eunok Lee, Soojin Hong, Hyunwoo Chung, Daeik Kim, Jiyoung Kim, Yongchul Oh, Hyeongsun Hong, Gyo-Young Jin, Chilhee Chung
Published in 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2012)

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Conference Proceeding

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

by Yi, Sang-Don, Oh, Yongchul, Ahn, Woo-Song
Year of Publication 08.02.2022

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Patent

A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n/sup +/-doped polysilicon

A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n/sup +/-doped polysilicon

by Nak-Jin Son, Yongchul Oh, Wookje Kim, Jang, S.-M., Wouns Yang, Gyoyoung Jin, Donggun Park, Kinam Kim
Published in IEEE transactions on electron devices (01.10.2004)

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Journal Article

A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n+-doped polysilicon

A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n+-doped polysilicon

by SON, Nak-Jin, OH, Yongchul, KIM, Wookje, JANG, Se-Myeong, YANG, Wouns, JIN, Gyoyoung, PARK, Donggun, KIM, Kinam
Published in IEEE transactions on electron devices (01.10.2004)

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Journal Article

A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n super(+)-doped polysilicon

A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n super(+)-doped polysilicon

by Son, Nak-Jin, Oh, Yongchul, Kim, Wookje, Jang, S-M, Yang, Wouns, Jin, Gyoyoung, Park, Donggun, Kim, Kinam
Published in IEEE transactions on electron devices (01.01.2004)

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Journal Article

Methods of operating and forming semiconductor devices including dual-gate electrode structures

Methods of operating and forming semiconductor devices including dual-gate electrode structures

by Choi Sungkwan, Chung Hyun-Woo, Kim Jiyoung, Oh Yongchul, Hong Hyeongsun, Jin Gyoyoung, Hwang Yoosang, Woo Dongsoo
Year of Publication 20.09.2016

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Patent

Semiconductor memory devices and methods of forming the same

Semiconductor memory devices and methods of forming the same

by Chung, Hyun-Woo, Kim, Kang-Uk, Oh, Yongchul, Kim, Hui-Jung, Kim, Hyun-Gi
Year of Publication 04.12.2012

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Patent

Integrated circuit devices including low-resistivity conductive patterns in recessed regions

Integrated circuit devices including low-resistivity conductive patterns in recessed regions

by Kim, Kang-Uk, Oh, Yongchul, Kim, Hui-Jung, Chung, Hyun-Woo, Kim, Hyun-Gi
Year of Publication 23.10.2012

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Patent

Methods of fabricating vertical channel transistors

Methods of fabricating vertical channel transistors

by Kim, Kang-Uk, Chung, Hyun-Woo, Oh, Yongchul, Kim, Hui-Jung, Kim, Hyun-Gi
Year of Publication 09.10.2012

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Patent

Method of fabricating vertical channel transistor

Method of fabricating vertical channel transistor

by Kim, Kang-Uk, Oh, Yongchul, Kim, Hui-Jung, Chung, Hyun-Woo, Kim, Hyun-Gi
Year of Publication 08.11.2011

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Patent

Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same

Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same

by Kim, Sungmin, Park, Donggun, Yoon, Eunjung, Jang, Semyeong, Kim, Keunnam, Oh, Yongchul
Year of Publication 01.07.2008

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Patent

SEMICONDUCTOR COMPONENT AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR COMPONENT AND METHOD FOR FABRICATING THE SAME

by KIM, DEOK-YONG, OH, YONGCHUL
Year of Publication 09.09.2021

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Patent

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

by AHN, WOO-SONG, OH, YONGCHUL
Year of Publication 15.07.2021

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Patent

PROTRUDING GATE TRANSISTOR AND METHOD OF PRODUCING SAME

PROTRUDING GATE TRANSISTOR AND METHOD OF PRODUCING SAME

by YOON, KYEONGILL, OH, YONGCHUL
Year of Publication 13.05.2021

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Patent

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

by KIM, DEOK-YONG, OH, YONGCHUL
Year of Publication 09.07.2020

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Patent

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

by YOON, KYEONGILL, OH, YONGCHUL
Year of Publication 09.07.2020

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Patent