C-V and gate tunneling current characterization of ultra-thin gate oxide MOS (t/sub ox/=1.3-1.8 nm)
Chang-Hoon Choi, Jung-Suk Goo, Tae-Young Oh, Zhiping Yu, Dutton, R.W., Bayoumi, A., Min Cao, Voorde, P.V., Vook, D.
Published in 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) (1999)
Published in 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) (1999)
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