Search Results - "OH, HYUNG-ROK" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Enhanced write performance of a 64-mb phase-change random access memory

Enhanced write performance of a 64-mb phase-change random access memory

by OH, Hyung-Rok, CHO, Beak-Hyung, JEONG, Gi-Tae, JEONG, Hong-Sik, KIM, Kinam, WOO YEONG CHO, KANG, Sangbeom, CHOI, Byung-Gil, KIM, Hye-Jin, KIM, Ki-Sung, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun
Published in IEEE journal of solid-state circuits (01.01.2006)

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Journal Article Conference Proceeding

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

by LEE, Kwang-Jin, CHO, Beak-Hyung, PARK, Mu-Hui, RO, Yu-Hwan, CHOI, Joon-Yong, KIM, Ki-Sung, KIM, Young-Ran, SHIN, In-Cheol, LIM, Ki-Won, CHO, Ho-Keun, CHOI, Chang-Han, CHUNG, Won-Ryul, CHO, Woo-Yeong, KIM, Du-Eung, YOON, Yong-Jin, YU, Kwang-Suk, JEONG, Gi-Tae, JEONG, Hong-Sik, KWAK, Choong-Keun, KIM, Chang-Hyun, KIM, Kinam, KANG, Sangbeom, CHOI, Byung-Gil, OH, Hyung-Rok, LEE, Chang-Soo, KIM, Hye-Jin, PARK, Joon-Min, QI WANG
Published in IEEE journal of solid-state circuits (01.01.2008)

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Journal Article Conference Proceeding

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

by KANG, Sangbeom, WOO YEONG CHO, YU HWAN RO, KIM, Suyeon, HA, Choong-Duk, KIM, Ki-Sung, KIM, Young-Ran, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun, JEONG, Gitae, JEONG, Hongsik, CHO, Beak-Hyung, KIM, Kinam, SHIN, Yunsueng, LEE, Kwang-Jin, LEE, Chang-Soo, OH, Hyung-Rok, CHOI, Byung-Gil, QI WANG, KIM, Hye-Jin, PARK, Mu-Hui
Published in IEEE journal of solid-state circuits (2007)

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Conference Proceeding Journal Article

$A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation$

A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

by Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho, Kwang-Jin Lee, Chang-Soo Lee, Hyung-Rok Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu Hwan Ro, Suyeon Kim, Choong-Duk Ha, Ki-Sung Kim, Young-Ran Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hongsik Jeong, Kinam Kim, Shin, Y.
Published in IEEE journal of solid-state circuits (01.01.2007)

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Journal Article

Occupational accident prediction modeling and analysis using SHAP

Occupational accident prediction modeling and analysis using SHAP

by Oh, Hyung-Rok, Son, Ae-Lin, Lee, ZoonKy
Published in Journal of Digital Contents Society (31.07.2021)

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Journal Article

A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

by Cho, Woo Yeong, Cho, Beak-Hyung, Choi, Byung-Gil, Oh, Hyung-Rok, Kang, Sangbeom, Kim, Ki-Sung, Kim, Kyung-Hee, Kim, Du-Eung, Kwak, Choong-Keun, Byun, Hyun-Geun, Hwang, Youngnam, Ahn, S, Koh, Gwan-Hyeob, Jeong, Gitae, Jeong, Hongsik, Kim, Kinam
Published in IEEE journal of solid-state circuits (01.01.2005)

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Journal Article

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

by Cho, Woo Yeong, Cho, Beak-Hyung, Byung-Gil Choi, Hyung-Rok Oh, Kang, Sangbeom, Ki-Sung, Kim, Kim, Kyung-Hee, Du-Eung, Kim, Kwak, Choong-Keun, Hyun-Geun Byun, Hwang, Youngnam, Ahn, S, Koh, Gwan-Hyeob, Jeong, Gitae, Jeong, Hongsik, Kim, Kinam
Published in IEEE journal of solid-state circuits (01.01.2005)

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Journal Article

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

by Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi, Hyung-Rok Oh, Sangbeom Kang, Ki-Sung Kim, Kyung-Hee Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Youngnam Hwang, Ahn, S., Gwan-Hyeob Koh, Gitae Jeong, Hongsik Jeong, Kinam Kim
Published in IEEE journal of solid-state circuits (01.01.2005)

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Journal Article

SPIN TRANSFER TORQUE AMGNETIC RANDOM ACCESS MEMORY FOR SUPPORTING OPERATIONAL MODES WITH MODE REGISTER

SPIN TRANSFER TORQUE AMGNETIC RANDOM ACCESS MEMORY FOR SUPPORTING OPERATIONAL MODES WITH MODE REGISTER

by Dong-hyun, Sohn, Chan-kyung, Kim, Yun-sang, Lee, Hye-jin, Kim, Sang-beom, Kang, Dong-seok, Kang, Hyung-rok, Oh, Chul-woo, Park, Soo-ho, Cha
Year of Publication 23.05.2019

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Patent

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

by Lee, Kwang-Jin, Cho, Beak-Hyung, Cho, Woo-Yeong, Kang, Sangbeom, Choi, Byung-Gil, Oh, Hyung-Rok, Lee, Chang-Soo, Kim, Hye-Jin, Park, Joon-Min, Wang, Qi, Park, Mu-Hui, Ro, Yu-Hwan, Choi, Joon-Yong, Kim, Ki-Sung, Kim, Young-Ran, Shin, In-Cheol, Lim, Ki-Won, Cho, Ho-Keun, Choi, Chang-Han, Chung, Won-Ryul, Kim, Du-Eung, Yu, Kwang-Suk, Jeong, Gi-Tae, Jeong, Hong-Sik, Kwak, Choong-Keun, Kim, Chang-Hyun, Kim, Kinam
Published in 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (01.02.2007)

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Conference Proceeding

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

by WOO YEONG CHO, CHO, Beak-Hyung, HWANG, Youngnam, AHN, Sujin, KOH, Gwan-Hyeob, JEONG, Gitae, JEONG, Hongsik, KIM, Kinam, CHOI, Byung-Gil, OH, Hyung-Rok, KANG, Sangbeom, KIM, Ki-Sung, KIM, Kyung-Hee, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun
Published in IEEE journal of solid-state circuits (2005)

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Conference Proceeding Journal Article

Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit lines

Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit lines

by Oh, Hyung-Rok, Kang, Sang-Beom, Kim, Du-Eung
Year of Publication 09.08.2011

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Patent

Phase change random access memory device

Phase change random access memory device

by Park, Mu-hui, Cho, Beak-hyung, Oh, Hyung-rok
Year of Publication 26.07.2011

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Patent

A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

by Woo Yeong Cho, Beak-hyung Cho, Byung-gil Choi, Hyung-rok Oh, Sang-beom Kang, Ki-sung Kim, Kyung-hee Kim, Du-eung Kim, Choong-keun Kwak, Hyun-geun Byun, Young-nam Hwang, Su-jin Ahn, Gi-tae Jung, Hong-sik Jung, Kinam Kim
Published in 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) (2004)

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Conference Proceeding

One-time programmable devices including chalcogenide material and electronic systems including the same

One-time programmable devices including chalcogenide material and electronic systems including the same

by Jeong, Chang-Wook, Kong, Jun-Hyok, Oh, Hyung-Rok
Year of Publication 05.07.2011

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Patent

Phase change random access memory

Phase change random access memory

by Oh, Hyung-rok, Cho, Woo-yeong, Cho, Beak-hyung
Year of Publication 19.10.2010

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Patent

Memory system, memory device and apparatus including writing driver circuit for a variable resistive memory

Memory system, memory device and apparatus including writing driver circuit for a variable resistive memory

by Cho, Beak-hyung, Cho, Woo-yeong, Oh, Hyung-rok
Year of Publication 30.03.2010

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Patent

Phase change random access memory device

Phase change random access memory device

by Park, Mu-hui, Cho, Beak-hyung, Oh, Hyung-rok
Year of Publication 02.03.2010

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Patent

Methods of programming one-time programmable devices including chalcogenide material

Methods of programming one-time programmable devices including chalcogenide material

by Jeong, Chang-Wook, Kong, Jun-Hyok, Oh, Hyung-Rok
Year of Publication 02.02.2010

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Patent

Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines

Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines

by Oh, Hyung-Rok, Kang, Sang-Beom, Kim, Du-Eung
Year of Publication 15.09.2009

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Patent

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