Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors
OH, Byoungchan, CHO, Heung-Jae, KIM, Heesang, SON, Younghwan, KANG, Taewook, PARK, Sunyoung, JANG, Seunghyun, LEE, Jong-Ho, SHIN, Hyungcheol
Published in IEEE transactions on electron devices (01.06.2011)
Published in IEEE transactions on electron devices (01.06.2011)
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Journal Article
Investigation of Gate Etch Damage at Metal/High- k Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current
Cho, Heung-Jae, Son, Younghwan, Oh, Byoungchan, Jang, Seunghyun, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol
Published in IEEE electron device letters (01.04.2011)
Published in IEEE electron device letters (01.04.2011)
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Journal Article
Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation Mode
CHO, Heung-Jae, SON, Younghwan, OH, Byoungchan, LEE, Sanghoon, LEE, Jong-Ho, PARK, Byung-Gook, SHIN, Hyungcheol
Published in IEEE transactions on electron devices (01.10.2010)
Published in IEEE transactions on electron devices (01.10.2010)
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Journal Article
f Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor
Hee-Sauk Jhon, Jae-Hong Lee, Jaeho Lee, Byoungchan Oh, Ickhyun Song, Yeonam Yun, Byung-Gook Park, Jong-Duk Lee, Hyungcheol Shin
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
Random Telegraph Signal-Like Fluctuation Created by Fowler--Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor
Kim, Heesang, Oh, Byoungchan, Kim, Kyungdo, Cha, Seon-Yong, Jeong, Jae-Goan, Hong, Sung-Joo, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol
Published in Japanese Journal of Applied Physics (01.09.2010)
Published in Japanese Journal of Applied Physics (01.09.2010)
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Journal Article
Rethinking DRAM's Page Mode With STT-MRAM
Oh, Byoungchan, Abeyratne, Nilmini, Kim, Nam Sung, Ahn, Jeongseob, Dreslinski, Ronald G., Mudge, Trevor
Published in IEEE transactions on computers (01.05.2023)
Published in IEEE transactions on computers (01.05.2023)
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Journal Article
Observation of three-level random telegraph noise in GIDL current of Saddle-Fin type DRAM cell transistor
Byoungchan Oh, Heung-Jae Cho, Heesang Kim, Hyungcheol Shin
Published in 2010 IEEE International Memory Workshop (01.05.2010)
Published in 2010 IEEE International Memory Workshop (01.05.2010)
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Conference Proceeding
Investigation of Gate Etch Damage at Metal/High-[Formula Omitted] Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current
Cho, Heung-Jae, Son, Younghwan, Oh, Byoungchan, Jang, Seunghyun, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol
Published in IEEE electron device letters (01.04.2011)
Published in IEEE electron device letters (01.04.2011)
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Journal Article
fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor
JHON, Hee-Sauk, LEE, Jae-Hong, LEE, Jaeho, OH, Byoungchan, SONG, Ickhyun, YEONAM YUN, PARK, Byung-Gook, LEE, Jong-Duk, SHIN, Hyungcheol
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
[Formula Omitted] Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor
Jhon, Hee-Sauk, Lee, Jae-Hong, Lee, Jaeho, Oh, Byoungchan, Song, Ickhyun, Yun, Yeonam, Park, Byung-Gook, Lee, Jong-Duk, Shin, Hyungcheol
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches
Ramadout, B., Guo-Neng Lu, Carrere, J.-P., Pinzelli, L., Perrot, C., Rivoire, M., Nemouchi, F.
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
f max Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor
Jhon, Hee-Sauk, Lee, Jae-Hong, Lee, Jaeho, Oh, Byoungchan, Song, Ickhyun, Yun, Yeonam, Park, Byung-Gook, Lee, Jong-Duk, Shin, Hyungcheol
Published in IEEE electron device letters (01.01.2009)
Published in IEEE electron device letters (01.01.2009)
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Journal Article
LOW OVERHEAD ERROR CORRECTION CODE
Howard, Jason, Oh, Byoungchan, Fryman, Joshua B, Polagani, Sai Dheeraj
Year of Publication 21.07.2022
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Year of Publication 21.07.2022
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