Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide
Park, Yeongeun, Yoon, Hyowon, Kim, Chaeyun, Kim, Gwangjae, Kang, Gyuhyeok, Seok, Ogyun, Ha, Min-Woo
Published in Japanese Journal of Applied Physics (01.01.2023)
Published in Japanese Journal of Applied Physics (01.01.2023)
Get full text
Journal Article
1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect
Yoon, Hyowon, Kim, Jinhun, Kim, Sangyeob, Kim, Chaeyun, Park, Yeongeun, Kwon, Soontak, Song, Jaejin, Lee, Jeongyun, Ha, Min-Woo, Seok, Ogyun
Published in Japanese Journal of Applied Physics (01.11.2023)
Published in Japanese Journal of Applied Physics (01.11.2023)
Get full text
Journal Article
The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation
Kim, Chaeyun, Yoon, Hyowon, Park, Yeongeun, Kim, Sangyeob, Kang, Gyuhyeok, Kim, Dong-Seok, Seok, Ogyun
Published in Micromachines (Basel) (01.04.2024)
Published in Micromachines (Basel) (01.04.2024)
Get full text
Journal Article
High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators
Seok, Ogyun, Ahn, Woojin, Han, Min-Koo, Ha, Min-Woo
Published in Semiconductor science and technology (01.02.2013)
Published in Semiconductor science and technology (01.02.2013)
Get full text
Journal Article
Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well
Seok, Ogyun, Ha, Min-Woo, Kang, In Ho, Kim, Hyoung Woo, Kim, Dong Young, Bahng, Wook
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing
Ahn, Woojin, Seok, Ogyun, Song, Seung Min, Han, Min-Koo, Ha, Min-Woo
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
Get full text
Journal Article
Conference Proceeding
(Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate
Kim, Hyoung Woo, Seok, Ogyun, Moon, Jeong Hyun, Bahng, Wook, Jo, Jungyol
Published in ECS transactions (09.04.2018)
Published in ECS transactions (09.04.2018)
Get full text
Journal Article