Destruction failure analysis and international reliability test standard for power devices
Setoya, Takashi, Ogura, Tsuneo, Saito, Wataru, Matsudai, Tomoko, Endo, Koichi
Published in Microelectronics and reliability (01.08.2015)
Published in Microelectronics and reliability (01.08.2015)
Get full text
Journal Article
Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
Saito, Wataru, Omura, Ichiro, Ogura, Tsuneo, Ohashi, Hiromichi
Published in Solid-state electronics (01.09.2004)
Published in Solid-state electronics (01.09.2004)
Get full text
Journal Article
High switching speed trench diode for 1200V RC-IGBT based on the concept of Schottky Controlled injection (SC)
Gejo, Ryohei, Ogura, Tsuneo, Misu, Shinichiro, Maeda, Yosuke, Matsuoka, Yuma, Yasuhara, Norio, Nakamura, Kazutoshi
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Get full text
Conference Proceeding
Journal Article
Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications
Saito, Wataru, Takada, Yoshiharu, Kuraguchi, Masahiko, Tsuda, Kunio, Omura, Ichiro, Ogura, Tsuneo
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
Get full text
Journal Article
Critical IGBT Design Regarding EMI and Switching Losses
Tsukuda, M., Omura, I., Sakiyama, Y., Yamaguchi, M., Matsushita, K., Ogura, T.
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
Get full text
Conference Proceeding