Search Results - "OGINO, MASAAKI" :: K.UTB vyhledávací portál

Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

by Nakazawa, Haruo, Ogino, Masaaki, Teranishi, Hideaki, Takahashi, Yoshikazu, Habuka, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2014)

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Variation of Chemical Vapor Deposited SiO2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing

by Sometani, Mitsuru, Hasunuma, Ryu, Ogino, Masaaki, Kuribayashi, Hitoshi, Sugahara, Yoshiyuki, Uedono, Akira, Yamabe, Kikuo
Published in Jpn J Appl Phys (01.02.2012)

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Reverse-Blocking IGBTs with V-Groove Isolation Layer for Three-Level Power Converters

by Nakazawa, Haruo, Lu, David Hongfei, Ogino, Masaaki, Shirakawa, Tohru, Takahashi, Yoshikazu
Published in IEEJ JOURNAL OF INDUSTRY APPLICATIONS (01.01.2013)

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SEMICONDUCTOR DEVICE MANUFACTURING METHOD

by OGINO MASAAKI
Year of Publication 23.05.2016

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Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride

by Ogino, Masaaki, Sugahara, Yoshiyuki, Kuribayashi, Hitoshi, Yamabe, Kikuo
Published in Japanese Journal of Applied Physics (2004)

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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

by OGINO, MASAAKI, WAKIMOTO, HIROKI
Year of Publication 24.01.2013

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Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

by Nakazawa, Haruo, Ogino, Masaaki, Teranishi, Hideaki, Takahashi, Yoshikazu, Habuka, Hitoshi
Published in Materials science in semiconductor processing (01.06.2013)

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METHOD FOR INTRODUCING IMPURITY, DEVICE FOR INTRODUCING IMPURITY AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

by OGINO MASAAKI, IGUCHI KENICHI, NAKAZAWA HARUO
Year of Publication 01.02.2016

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IMPURITY ADDING APPARATUS, IMPURITY ADDING METHOD, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

by OGINO, MASAAKI, IGUCHI, KENICHI, NAKAZAWA, HARUO
Year of Publication 17.12.2015

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

by OGINO MASAAKI, MOCHIZUKI EIJI, SAITO TAKASHI, TAKAHASHI YOSHIKAZU
Year of Publication 07.09.2017

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Film Thickness Prediction of Poly-Silicon LPCVD Process with a Simplified Two-Step Surface Reaction Model

by Kaneko, Kimihisa, Ogino, Masaaki, Shimizu, Ryosuke, Koshi, Mitsuo, Shimogaki, Yukihiro
Published in ECS journal of solid state science and technology (01.01.2013)

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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

by OGINO, MASAAKI, TERANISHI, HIDEAKI, NAKAZAWA, HARUO
Year of Publication 05.12.2013

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SEMICONDUCTOR DEVICE

by OGINO, MASAAKI, WAKIMOTO, HIROKI, YOSHIKAWA, KOH
Year of Publication 21.11.2013

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Variation of Chemical Vapor Deposited SiO 2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing

by Sometani, Mitsuru, Hasunuma, Ryu, Ogino, Masaaki, Kuribayashi, Hitoshi, Sugahara, Yoshiyuki, Uedono, Akira, Yamabe, Kikuo
Published in Japanese Journal of Applied Physics (01.02.2012)

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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

by OGINO, MASAAKI, TACHIOKA, MASAAKI, NAKAJIMA, TSUNEHIRO, IGUCHI, KENICHI, NAKAZAWA, HARUO
Year of Publication 22.10.2015

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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

by OGINO, MASAAKI, TACHIOKA, MASAAKI, NAKAJIMA, TSUNEHIRO, IGUCHI, KENICHI, NAKAZAWA, HARUO
Year of Publication 22.10.2015

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SEMICONDUCTOR-DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

by OGINO, MASAAKI, NAKAJIMA, TSUNEHIRO, NAKAZAWA, HARUO
Year of Publication 20.09.2012

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Predictive Model Extraction for Polysilicon Low-Pressure Chemical Vapor Deposition in a Commercial Scale Reactor

by Shimizu, Ryosuke, Ogino, Masaaki, Sugiyama, Masakazu, Shimogaki, Yukihiro
Published in Journal of the Electrochemical Society (2007)

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

by MOCHIZUKI, EIJI, OGINO, MASAAKI, SAITOU, TAKASHI, TAKAHASHI, YOSHIKAZU
Year of Publication 02.10.2014

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Variation of Chemical Vapor Deposited SiO 2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing

by Sometani, Mitsuru, Hasunuma, Ryu, Ogino, Masaaki, Kuribayashi, Hitoshi, Sugahara, Yoshiyuki, Uedono, Akira, Yamabe, Kikuo
Published in Japanese Journal of Applied Physics (01.02.2012)

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