Novel Epitaxy for Nitride Semiconductors Using Plasma Technology
Oda, Osamu, Hori, Masaru
Published in Physica status solidi. A, Applications and materials science (01.01.2021)
Published in Physica status solidi. A, Applications and materials science (01.01.2021)
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Journal Article
Mechanical properties of maze-like carbon nanowalls synthesized by the radial injection plasma enhanced chemical vapor deposition method
Ghodke, Swapnil, Murashima, Motoyuki, Christy, Dennis, Van Nong, Ngo, Ishikawa, Kenji, Oda, Osamu, Umehara, Noritsugu, Hori, Masaru
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (18.01.2023)
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (18.01.2023)
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Journal Article
Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
Dhasiyan, Arun Kumar, Amalraj, Frank Wilson, Jayaprasad, Swathy, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Hori, Masaru
Published in Scientific reports (13.05.2024)
Published in Scientific reports (13.05.2024)
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Journal Article
High-Efficient Hydrogen Generation Study by a Reverse Tailing Pulsed-Plasma Water Dissociation Applying Wet Electrode Method
Shimizu, Naohiro, Borude, Ranjit R., Tanaka, Reiko, Oda, Osamu, Hosoe, Hiroki, Ino, Satoshi, Inoue, Yosuke, Hori, Masaru
Published in Journal of the Electrochemical Society (01.05.2022)
Published in Journal of the Electrochemical Society (01.05.2022)
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Journal Article
Novel Method of Rebound Tailing Pulse (RTP) for Water Dissociation
Shimizu, Naohiro, Borude, Ranjit R., Tanaka, Reiko, Ishikawa, Kenji, Oda, Osamu, Hosoe, Hiroki, Ino, Satoshi, Inoue, Yosuke, Hori, Masaru
Published in IEEE transactions on plasma science (01.09.2021)
Published in IEEE transactions on plasma science (01.09.2021)
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Journal Article
Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)
Amalraj, Frank Wilson, Dhasiyan, Arun Kumar, Lu, Yi, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Kondo, Hiroki, Sekine, Makoto, Ikarashi, Nobuyuki, Hori, Masaru
Published in AIP advances (01.11.2018)
Published in AIP advances (01.11.2018)
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Journal Article
Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation
Liu, Zecheng, Imamura, Masato, Asano, Atsuki, Ishikawa, Kenji, Takeda, Keigo, Kondo, Hiroki, Oda, Osamu, Sekine, Makoto, Hori, Masaru
Published in Applied physics express (01.08.2017)
Published in Applied physics express (01.08.2017)
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Journal Article
Effects of Radical Species on Structural and Electronic Properties of Amorphous Carbon Films Deposited by Radical-Injection Plasma-Enhanced Chemical Vapor Deposition
Jia, Lingyun, Sugiura, Hirotsugu, Kondo, Hiroki, Takeda, Keigo, Ishikawa, Kenji, Oda, Osamu, Sekine, Makoto, Hiramatsu, Mineo, Hori, Masaru
Published in Plasma processes and polymers (01.07.2016)
Published in Plasma processes and polymers (01.07.2016)
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Journal Article
Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C
Takai, Shinnosuke, Lu, Yi, Oda, Osamu, Takeda, Keigo, Kondo, Hiroki, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru
Published in Japanese Journal of Applied Physics (01.06.2017)
Published in Japanese Journal of Applied Physics (01.06.2017)
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Journal Article
Effect of gas residence time on near-edge X-ray absorption fine structures of hydrogenated amorphous carbon films grown by plasma-enhanced chemical vapor deposition
Jia, Lingyun, Sugiura, Hirotsugu, Kondo, Hiroki, Takeda, Keigo, Ishikawa, Kenji, Oda, Osamu, Sekine, Makoto, Hiramatsu, Mineo, Hori, Masaru
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources
Tanide, Atsushi, Nakamura, Shohei, Horikoshi, Akira, Takatsuji, Shigeru, Kimura, Takahiro, Kinose, Kazuo, Nadahara, Soichi, Nishikawa, Masazumi, Ebe, Akinori, Ishikawa, Kenji, Oda, Osamu, Hori, Masaru
Published in ACS omega (20.10.2020)
Published in ACS omega (20.10.2020)
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Journal Article
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
Lu, Yi, Kondo, Hiroki, Ishikawa, Kenji, Oda, Osamu, Takeda, Keigo, Sekine, Makoto, Amano, Hiroshi, Hori, Masaru
Published in Journal of crystal growth (01.04.2014)
Published in Journal of crystal growth (01.04.2014)
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Journal Article
Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN
Sakai, Yusuke, Selvaraj, S. Lawrence, Oda, Osamu, Egawa, Takashi
Published in AIP advances (01.08.2013)
Published in AIP advances (01.08.2013)
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Journal Article
Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE
Sakai, Masahiro, Ishikawa, Hiroyasu, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi, Shibata, Tomohiko, Asai, Keiichiro, Sumiya, Shigeaki, Kuraoka, Yoshitaka, Tanaka, Mitsuhiro, Oda, Osamu
Published in Journal of crystal growth (01.09.2002)
Published in Journal of crystal growth (01.09.2002)
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