Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs
Schlotter, P, Baur, J, Hielscher, Ch, Kunzer, M, Obloh, H, Schmidt, R, Schneider, J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
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Conference Proceeding
Nickel doping of nitrogen enriched CVD-diamond for the production of single photon emitters
Wolfer, M., Kriele, A., Williams, O. A., Obloh, H., Leancu, C.-C., Nebel, C. E.
Published in Physica status solidi. A, Applications and materials science (01.09.2009)
Published in Physica status solidi. A, Applications and materials science (01.09.2009)
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Conference Proceeding
Controlled incorporation of mid-to-high Z transition metals in CVD diamond
Biener, M.M., Biener, J., Kucheyev, S.O., Wang, Y.M., El-Dasher, B., Teslich, N.E., Hamza, A.V., Obloh, H., Mueller-Sebert, W., Wolfer, M., Fuchs, T., Grimm, M., Kriele, A., Wild, C.
Published in Diamond and related materials (01.05.2010)
Published in Diamond and related materials (01.05.2010)
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Doping of single crystalline diamond with nickel
Wolfer, M., Obloh, H., Williams, O. A., Leancu, C.-C., Kirste, L., Gheeraert, E., Nebel, C. E.
Published in Physica status solidi. A, Applications and materials science (01.09.2010)
Published in Physica status solidi. A, Applications and materials science (01.09.2010)
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Conference Proceeding
Self-compensation in Mg doped p-type GaN grown by MOCVD
Obloh, H, Bachem, K.H, Kaufmann, U, Kunzer, M, Maier, M, Ramakrishnan, A, Schlotter, P
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method
Herres, N., Kirste, L., Obloh, H., Köhler, K., Wagner, J., Koidl, P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
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Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts
Hilsenbeck, J., Nebauer, E., Würfl, J., Tränkle, G., Obloh, H.
Published in Electronics letters (25.05.2000)
Published in Electronics letters (25.05.2000)
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Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
Würfl, J., Hilsenbeck, J., Nebauer, E., Tränkle, G., Obloh, H., Österle, W.
Published in Microelectronics and reliability (01.08.2000)
Published in Microelectronics and reliability (01.08.2000)
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X-ray analysis of the texture of heteroepitaxial gallium nitride films
Herres, N, Obloh, H, Bachem, K.H, Helming, K
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
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Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)
Glaser, E.R, Carlos, W.E, Braga, G.C.B, Freitas, J.A, Moore, W.J, Shanabrook, B.V, Wickenden, A.E, Koleske, D.D, Henry, R.L, Bayerl, M.W, Brandt, M.S, Obloh, H, Kozodoy, P, DenBaars, S.P, Mishra, U.K, Nakamura, S, Haus, E, Speck, J.S, Van Nostrand, J.E, Sanchez, M.A, Calleja, E, Ptak, A.J, Myers, T.H, Molnar, R.J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.05.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.05.2002)
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Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2 eV) recombination from Mg-doped GaN
Glaser, E.R, Kennedy, T.A, Freitas, J.A, Shanabrook, B.V, Wickenden, A.E, Koleske, D.D, Henry, R.L, Obloh, H
Published in Physica. B, Condensed matter (01.12.1999)
Published in Physica. B, Condensed matter (01.12.1999)
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Origin of the Q=11 meV bound exciton in GaN
Kaufmann, U, Merz, C, Šantic, B, Niebuhr, R, Obloh, H, Bachem, K.H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
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Overhauser shift and dynamic nuclear polarization in InP
Gotschy, B, Denninger, G, Obloh, H, Wilkening, W, Schneider, J
Published in Solid state communications (01.08.1989)
Published in Solid state communications (01.08.1989)
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Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures
SCHMITZ, J, WAGNER, J, MAIER, M, OBLOH, H, KOIDL, P, RALSTON, J. D
Published in Journal of electronic materials (01.11.1994)
Published in Journal of electronic materials (01.11.1994)
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Phonon-drag effect in GaAs-AlxGa1-xAs heterostructures at very low temperatures
Ruf, C, Obloh, H, Junge, B, Gmelin, E, Ploog, K, Weimann, G
Published in Physical review. B, Condensed matter (15.04.1988)
Published in Physical review. B, Condensed matter (15.04.1988)
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Effect of nuclear polarization on the conduction-electron spin resonance in InP
Clerjaud, B, Gendron, F, Obloh, H, Schneider, J, Wilkening, W
Published in Physical review. B, Condensed matter (01.08.1989)
Published in Physical review. B, Condensed matter (01.08.1989)
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Enhancement of the in-plane effective mass of electrons in modulation-doped InxGa1-xAs quantum wells due to confinement effects
Hendorfer, G, Seto, M, Ruckser, H, Jantsch, W, Helm, M, Brunthaler, G, Jost, W, Obloh, H, Köhler, K, As, DJ
Published in Physical review. B, Condensed matter (15.07.1993)
Published in Physical review. B, Condensed matter (15.07.1993)
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