Search Results - "OBINATA, SHIGEYUKI" :: K.UTB vyhledávací portál

Proposal of new interconnection technique for very high-voltage IC's

by FUJIHIRA, T, YANO, Y, OBINATA, S, KUMAGAI, N, SAKURAI, K
Published in Japanese Journal of Applied Physics (01.11.1996)

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MOS semiconductor element e.g. for power MOSFET, IGBT, etc. - has semiconductor layer in whose surface, regions of opposite conductivity are selectively formed

by OBINATA, SHIGEYUKI
Year of Publication 14.06.2007

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Patent

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MOS semiconductor element e.g. for power MOSFET, IGBT, etc. - has semiconductor layer in whose surface, regions of opposite conductivity are selectively formed

by OBINATA, SHIGEYUKI
Year of Publication 16.12.2004

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Patent

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High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

by YANO, YUKIO, OBINATA, SHIGEYUKI, FUJIHARA, TATSUHIKO, KUMAGAI, NAOKI
Year of Publication 10.06.2015

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Patent

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High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

by YANO, YUKIO, OBINATA, SHIGEYUKI, FUJIHARA, TATSUHIKO, KUMAGAI, NAOKI
Year of Publication 10.12.2014

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Patent

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MOS Semiconductor device

by SHIGEYUKI OBINATA
Year of Publication 08.03.1995

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Patent

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MOS semiconductor device having a main unit element and a sense unit element for monitoring the current in the main unit element

by OBINATA; SHIGEYUKI
Year of Publication 23.08.1994

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Patent

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SENSING CURRENT IN MOS SEMICONDUCTOR DEVICES

by SHIGEYUKI OBINATA
Year of Publication 06.01.1993

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Patent

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High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

by YANO, YUKIO, OBINATA, SHIGEYUKI, FUJIHARA, TATSUHIKO, KUMAGAI, NAOKI
Year of Publication 07.12.2011

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Patent

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Insulated gate-type bipolar transistor

by YAMAZAKI, TOMOYUKI, OBINATA, SHIGEYUKI
Year of Publication 02.05.2002

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Patent

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Vertical MOS semiconductor device

by YAMAZAKI, TOMOYUKI, OBINATA, SHIGEYUKI, FUJIHIRA, TATSUHIKO, OTSUKI, MASAHITO, MOMOTA, SEIJI
Year of Publication 08.06.2011

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Patent

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High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

by YANO, YUKIO, OBINATA, SHIGEYUKI, FUJIHARA, TATSUHIKO, KUMAGAI, NAOKI
Year of Publication 25.05.2011

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Patent

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High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

by YANO, YUKIO, OBINATA, SHIGEYUKI, NAOKI, KUMAGAI, FUJIHIRA, TATSUHIKO
Year of Publication 25.05.2011

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Patent

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High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

by YANO, YUKIO, OBINATA, SHIGEYUKI, NAOKI, KUMAGAI, FUJIHIRA, TATSUHIKO
Year of Publication 23.12.2009

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Patent

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Insulated-gate type bipolar transistor

by YAMAZAKI; TOMOYUKI, OBINATA; SHIGEYUKI
Year of Publication 17.09.1996

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Patent

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Insulated gate-type bipolar transistor

by YAMAZAKI, TOMOYUKI, OBINATA, SHIGEYUKI
Year of Publication 06.09.1995

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Patent

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High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

by YANO, YUKIO, OBINATA, SHIGEYUKI, NAOKI, KUMAGAI, FUJIHIRA, TATSUHIKO
Year of Publication 06.09.2006

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Patent

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Vertical MOS semiconductor device

by YAMAZAKI, TOMOYUKI, OBINATA, SHIGEYUKI, FUJIHIRA, TATSUHIKO, OTSUKI, MASAHITO, MOMOTA, SEIJI
Year of Publication 29.06.2005

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Patent

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Vertikales MOS-Halbleiterbauelement

by YAMAZAKI, TOMOYUKI, OBINATA, SHIGEYUKI, FUJIHIRA, TATSUHIKO, OTSUKI, MASAHITO, MOMOTA, SEIJI
Year of Publication 04.03.2004

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Patent

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Bipolartransistor mit isoliertem Gate

by YAMAZAKI, TOMOYUKI, OBINATA, SHIGEYUKI
Year of Publication 28.11.2002

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Patent

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