Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation
Fiegna, C., Yang Yang, Sangiorgi, E., O'Neill, A.G.
Published in IEEE transactions on electron devices (01.01.2008)
Published in IEEE transactions on electron devices (01.01.2008)
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Journal Article
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
Dalapati, G.K., Chattopadhyay, S., Kwa, K.S.K., Olsen, S.H., Tsang, Y.L., Agaiby, R., O'Neill, A.G., Dobrosz, P., Bull, S.J.
Published in IEEE transactions on electron devices (01.05.2006)
Published in IEEE transactions on electron devices (01.05.2006)
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Journal Article
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Kwa, K.S.K., Chattopadhyay, S., Waite, A.M., Tang, Y.T., Evans, A.G.R., Norris, D.J., Cullis, A.G., Paul, D.J., Robbins, D.J.
Published in IEEE transactions on electron devices (01.09.2003)
Published in IEEE transactions on electron devices (01.09.2003)
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Journal Article
A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors
De Michielis, M., Esseni, D., Tsang, Y.L., Palestri, P., Selmi, L., O'Neill, A.G., Chattopadhyay, S.
Published in IEEE transactions on electron devices (01.09.2007)
Published in IEEE transactions on electron devices (01.09.2007)
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Journal Article
Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs
Olsen, S.H., Escobedo-Cousin, E., Varzgar, J.B., Agaiby, R., Seger, J., Dobrosz, P., Chattopadhyay, S., Bull, S.J., O'Neill, A.G., Hellstrom, P.-E., Edholm, J., Ostling, M., Lyutovich, K.L., Oehme, M., Kasper, E.
Published in IEEE transactions on electron devices (01.09.2006)
Published in IEEE transactions on electron devices (01.09.2006)
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Journal Article
Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs
Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.S.K., Waite, A.M., Tang, Y.T., Evans, A.G.R., Zhang, J.
Published in IEEE transactions on electron devices (01.07.2004)
Published in IEEE transactions on electron devices (01.07.2004)
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Journal Article
4H-SiC rectifiers with dual metal planar Schottky contacts
Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G.
Published in IEEE transactions on electron devices (01.05.2002)
Published in IEEE transactions on electron devices (01.05.2002)
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Journal Article
Test chip for the development and evaluation of sensors for measuring stress in metal interconnects
Terry, J.G., Smith, S., Walton, A.J., Gundlach, A.M., Stevenson, J.T.M., Horsfall, A.B., Kai Wang, dos Santos, J.M.M., Soare, S.M., Wright, N.G., O'Neill, A.G., Bull, S.J.
Published in IEEE transactions on semiconductor manufacturing (01.05.2005)
Published in IEEE transactions on semiconductor manufacturing (01.05.2005)
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Journal Article
Conference Proceeding
Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode
Gaspari, V., Fobelets, K., Ding, P.W., Velazquez-Perez, J.E., Olsen, S.H., O'Neill, A.G., Zhang, J.
Published in IEEE electron device letters (01.05.2004)
Published in IEEE electron device letters (01.05.2004)
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Journal Article
Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.S.K., Waite, A.M., Tang, Y.T., Evans, A.G.R., Jing Zhang
Published in IEEE transactions on electron devices (01.07.2004)
Published in IEEE transactions on electron devices (01.07.2004)
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Journal Article
Strained Si/SiGe MOS technology: Improving gate dielectric integrity
Olsen, S.H., Yan, L., Agaiby, R., Escobedo-Cousin, E., O’Neill, A.G., Hellström, P.-E., Östling, M., Lyutovich, K., Kasper, E., Claeys, C., Parker, E.H.C.
Published in Microelectronic engineering (01.03.2009)
Published in Microelectronic engineering (01.03.2009)
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Journal Article
Conference Proceeding
Performance Enhancements in Scaled Strained-SiGe pMOSFETs With [Formula Omitted] Gate Stacks
Alatise, O.M, Olsen, S.H, Cowern, N, O'Neill, A.G, Majhi, P
Published in IEEE transactions on electron devices (01.10.2009)
Published in IEEE transactions on electron devices (01.10.2009)
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Journal Article
Using Piezoresistance Model With C- R Conversion for Modeling of Strain-Induced Mobility
Tsang, Y.L., O'Neill, A.G., Gallacher, B.J., Olsen, S.H.
Published in IEEE electron device letters (01.09.2008)
Published in IEEE electron device letters (01.09.2008)
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Journal Article
Modeling of the Threshold Voltage in Strained Si/Si1 - x Gex/Si1 - yGey(x > or = y) CMOS Architectures
Tsang, Y.L, Chattopadhyay, S, Uppal, S, Escobedo-Cousin, E, Ramakrishnan, H.K, Olsen, S.H, O'Neill, A.G
Published in IEEE transactions on electron devices (01.11.2007)
Published in IEEE transactions on electron devices (01.11.2007)
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Journal Article
Performance Enhancements in Scaled Strained-SiGe pMOSFETs With \hbox/\hbox Gate Stacks
Alatise, O.M., Olsen, S.H., Cowern, N., O'Neill, A.G., Majhi, P.
Published in IEEE transactions on electron devices (01.10.2009)
Published in IEEE transactions on electron devices (01.10.2009)
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Journal Article