Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation
Leitsmann, Roman, Lazarevic, Florian, Nadimi, Ebrahim, Öttking, Rolf, Plänitz, Philipp, Erben, Elke
Published in Journal of applied physics (28.06.2015)
Published in Journal of applied physics (28.06.2015)
Get full text
Journal Article
Defect generation and activation processes in HfO2 thin films: Contributions to stress-induced leakage currents
Öttking, Rolf, Kupke, Steve, Nadimi, Ebrahim, Leitsmann, Roman, Lazarevic, Florian, Plänitz, Philipp, Roll, Guntrade, Slesazeck, Stefan, Trentzsch, Martin, Mikolajick, Thomas
Published in Physica status solidi. A, Applications and materials science (01.03.2015)
Published in Physica status solidi. A, Applications and materials science (01.03.2015)
Get full text
Journal Article
Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation
Nadimi, Ebrahim, Öttking, Rolf, Plänitz, Philipp, Trentzsch, Martin, Kelwing, Torben, Carter, Rick, Schreiber, Michael, Radehaus, Christian
Published in Journal of physics. Condensed matter (14.09.2011)
Published in Journal of physics. Condensed matter (14.09.2011)
Get full text
Journal Article
The Degradation Process of High- k~/ Gate-Stacks: A Combined Experimental and First Principles Investigation
Nadimi, Ebrahim, Roll, Guntrade, Kupke, Steve, Öttking, Rolf, Plänitz, Philipp, Radehaus, Christian, Schreiber, Michael, Agaiby, Rimoon, Trentzsch, Martin, Knebel, Steve, Slesazeck, Stefan, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
Get full text
Journal Article
Aluminum Electrode Insulation Dynamics via Interface Oxidation by Reactant Diffusion in Organic Layers
Fluhr, Daniel, Züfle, Simon, Muhsin, Burhan, Öttking, Rolf, Seeland, Marco, Roesch, Roland, Schubert, Ulrich S., Ruhstaller, Beat, Krischok, Stefan, Hoppe, Harald
Published in Physica status solidi. A, Applications and materials science (06.12.2018)
Published in Physica status solidi. A, Applications and materials science (06.12.2018)
Get full text
Journal Article
Defect generation and activation processes in HfO 2 thin films: Contributions to stress-induced leakage currents: Defect generation and activation processes in HfO 2 thin films
Öttking, Rolf, Kupke, Steve, Nadimi, Ebrahim, Leitsmann, Roman, Lazarevic, Florian, Plänitz, Philipp, Roll, Guntrade, Slesazeck, Stefan, Trentzsch, Martin, Mikolajick, Thomas
Published in Physica status solidi. A, Applications and materials science (01.03.2015)
Published in Physica status solidi. A, Applications and materials science (01.03.2015)
Get full text
Journal Article
First Principle Calculation of the Leakage Current Through [Formula Omitted] and [Formula Omitted] Gate Dielectrics in MOSFETs
Nadimi, Ebrahim, Planitz, Philipp, Ottking, Rolf, Wieczorek, Karsten, Radehaus, Christian
Published in IEEE transactions on electron devices (01.03.2010)
Published in IEEE transactions on electron devices (01.03.2010)
Get full text
Journal Article
First-principles investigation of the leakage current through strained SiO2 gate dielectrics in MOSFETs
Nadimi, E., Planitz, Philipp, Ottking, Rolf, Schreiber, M., Radehaus, C.
Published in 2011 Semiconductor Conference Dresden (01.09.2011)
Published in 2011 Semiconductor Conference Dresden (01.09.2011)
Get full text
Conference Proceeding