Structural analysis of InGaN epilayers
O'Donnell, K P, Mosselmans, J F W, Martin, R W, Pereira, S, White, M E
Published in Journal of physics. Condensed matter (13.08.2001)
Published in Journal of physics. Condensed matter (13.08.2001)
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Journal Article
The composition dependence of the InxGa1-xN bandgap
O'DONNELL, K. P, FERNANDEZ-TORRENTE, I, EDWARDS, P. R, MARTIN, R. W
Published in Journal of crystal growth (15.08.2004)
Published in Journal of crystal growth (15.08.2004)
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Conference Proceeding
Journal Article
High temperature annealing of rare earth implanted GaN films: Structural and optical properties
Lorenz, K., Wahl, U., Alves, E., Nogales, E., Dalmasso, S., Martin, R.W., O‘Donnell, K.P., Wojdak, M., Braud, A., Monteiro, T., Wojtowicz, T., Ruterana, P., Ruffenach, S., Briot, O.
Published in Optical materials (01.05.2006)
Published in Optical materials (01.05.2006)
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Conference Proceeding
Roughness in GaN/InGaN films and multilayers determined with Rutherford backscattering
Barradas, N.P., Alves, E., Pereira, S., Shvartsman, V.V., Kholkin, A.L., Pereira, E., O'Donnell, K.P., Liu, C., Deatcher, C.J., Watson, I.M., Mayer, M.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.2004)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.2004)
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Journal Article
Extended X-ray absorption fine structure studies of GaN epilayers doped with Er
Katchkanov, V., Mosselmans, J.F.W., O’Donnell, K.P., Nogales, E., Hernandez, S., Martin, R.W., Steckl, A., Lee, D.S.
Published in Optical materials (01.05.2006)
Published in Optical materials (01.05.2006)
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Journal Article
Conference Proceeding
Exciton dynamics in a CdSe/ZnSe multiple quantum well
Yang, F, Hayes, GR, Phillips, RT, O'Donnell, KP
Published in Physical review. B, Condensed matter (15.01.1996)
Published in Physical review. B, Condensed matter (15.01.1996)
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Journal Article
Optical properties of high-temperature annealed Eu-implanted GaN
Wang, K., Martin, R.W., Nogales, E., Katchkanov, V., O’Donnell, K.P., Hernandez, S., Lorenz, K., Alves, E., Ruffenach, S., Briot, O.
Published in Optical materials (01.05.2006)
Published in Optical materials (01.05.2006)
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Journal Article
Conference Proceeding
Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation
Hernández, S., Cuscó, R., Artús, L., Nogales, E., Martin, R.W., O’Donnell, K.P., Halambalakis, G., Briot, O., Lorenz, K., Alves, E.
Published in Optical materials (01.05.2006)
Published in Optical materials (01.05.2006)
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Conference Proceeding
Correlating Composition and Luminescence Variations in III-Nitride Semiconductor Alloys
Edwards, PR, Bejtka, K, Watson, IM, Fernández-Garrido, S, Calleja, E, Martin, RW, O'Donnell, KP
Published in Microscopy and microanalysis (01.08.2008)
Published in Microscopy and microanalysis (01.08.2008)
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Journal Article
Implantation and annealing studies of Tm-implanted GaN
Lorenz, K, Alves, E, Wahl, U, Monteiro, T, Dalmasso, S, Martin, R.W, O’Donnell, K.P, Vianden, R
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2003)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2003)
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Journal Article
Photoluminescence studies of Eu-implanted GaN epilayers
Katchkanov, V., O'Donnell, K. P., Dalmasso, S., Martin, R. W., Braud, A., Nakanishi, Y., Wakahara, A., Yoshida, A.
Published in Physica Status Solidi (b) (01.06.2005)
Published in Physica Status Solidi (b) (01.06.2005)
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Journal Article
The dependence of the optical energies on InGaN composition
O'Donnell, K.P, Martin, R.W, Trager-Cowan, C, White, M.E, Esona, K, Deatcher, C, Middleton, P.G, Jacobs, K, Van der Stricht, W, Merlet, C, Gil, B, Vantomme, A, Mosselmans, J.F.W
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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Journal Article
Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers
Pereira, S, Correia, M.R, Pereira, E, O'Donnell, K.P, Martin, R.W, White, M.E, Alves, E, Sequeira, A.D, Franco, N
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.05.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.05.2002)
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Journal Article
The microstructure of Er MBE doped GaN
Wojtowicz, T, Ruterana, P, Rousseau, N, Briot, O, Dalmasso, S, Martin, R.W, O’Donnell, K.P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2003)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2003)
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Journal Article
Extended X-Ray Absorption Fine Structure (EXAFS) of InN and InGaN
O'Donnell, K.P., Martin, R.W., White, M.E., Mosselmans, J.F.W., Guo, Qixin
Published in physica status solidi (b) (01.11.1999)
Published in physica status solidi (b) (01.11.1999)
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