A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures
Spassov, D., Skeparovski, A., Paskaleva, A., Novkovski, N.
Published in Thin solid films (01.09.2016)
Published in Thin solid films (01.09.2016)
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A comprehensive model for the I-V characteristics of metal-Ta2O5/SiO2-Si structures
NOVKOVSKI, N, ATANASSOVA, E
Published in Applied physics. A, Materials science & processing (01.06.2006)
Published in Applied physics. A, Materials science & processing (01.06.2006)
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Constant current stress of Ti-doped Ta2O5 on nitrided Si
Paskaleva, A, Atanassova, E, Novkovski, N
Published in Journal of physics. D, Applied physics (21.01.2009)
Published in Journal of physics. D, Applied physics (21.01.2009)
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Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack
Atanassova, E., Novkovski, N., Spassov, D., Paskaleva, A., Skeparovski, A.
Published in Microelectronics and reliability (01.02.2014)
Published in Microelectronics and reliability (01.02.2014)
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Charge trapping at Pt/high- k dielectric (Ta 2O 5) interface
Stojanovska-Georgievska, L., Novkovski, N., Atanassova, E.
Published in Physica. B, Condensed matter (01.09.2011)
Published in Physica. B, Condensed matter (01.09.2011)
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Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks
ATANASSOVA, E, PASKALEVA, A, NOVKOVSKI, N
Published in Microelectronics and reliability (01.04.2008)
Published in Microelectronics and reliability (01.04.2008)
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Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks
ATANASSOVA, E, NOVKOVSKI, N, PASKALEVA, A, SPASSOV, D
Published in Microelectronics and reliability (01.06.2010)
Published in Microelectronics and reliability (01.06.2010)
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Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode
Atanassova, E., Paskaleva, A., Novkovski, N., Georgieva, M.
Published in Journal of applied physics (01.05.2005)
Published in Journal of applied physics (01.05.2005)
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Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks
Skeparovski, A, Novkovski, N, Atanassova, E, Paskaleva, A, Lazarov, V K
Published in Journal of physics. D, Applied physics (15.06.2011)
Published in Journal of physics. D, Applied physics (15.06.2011)
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Charge trapping effect at the contact between a high-work-function metal and Ta2O5 high-k dielectric
Novkovski, N, Skeparovski, A, Atanassova, E
Published in Journal of physics. D, Applied physics (21.05.2008)
Published in Journal of physics. D, Applied physics (21.05.2008)
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