Direct band-gap crossover in epitaxial monolayer boron nitride
Elias, C, Valvin, P, Pelini, T, Summerfield, A, Mellor, C J, Cheng, T S, Eaves, L, Foxon, C T, Beton, P H, Novikov, S V, Gil, B, Cassabois, G
Published in Nature communications (14.06.2019)
Published in Nature communications (14.06.2019)
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Journal Article
Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., Summerfield, A., Mellor, C. J., Cheng, T. S., Eaves, L., Foxon, C. T., Beton, P. H., Lazzeri, M., Segura, A., Novikov, S. V.
Published in Physical review. X (01.03.2022)
Published in Physical review. X (01.03.2022)
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Journal Article
Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
Vuong, T Q P, Cassabois, G, Valvin, P, Rousseau, E, Summerfield, A, Mellor, C J, Cho, Y, Cheng, T S, Albar, J D, Eaves, L, Foxon, C T, Beton, P H, Novikov, S V, Gil, B
Published in 2d materials (17.03.2017)
Published in 2d materials (17.03.2017)
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Journal Article
Simultaneous Enhancement of Thermopower and Electrical Conductivity through Isovalent Substitution of Cerium in Bismuth Selenide Thermoelectric Materials
Musah, Jamal-Deen, Yanjun, Xiao, Ilyas, A. M, Novak, Travis G, Jeon, Seokwoo, Arava, Clement, Novikov, S. V, Nikulin, D. S, Xu, Wei, Liu, Liyao, Md, Asaduzzaman, Lam, Kwok-Ho, Chen, Xianfeng, Wu, Chi-Man Lawrence, Roy, Vellaisamy A. L
Published in ACS applied materials & interfaces (27.11.2019)
Published in ACS applied materials & interfaces (27.11.2019)
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Journal Article
Electronic Structure and Thermoelectric Properties of Transition Metal Monosilicides
Pshenay-Severin, D. A., Ivanov, Yu. V., Burkov, A. T., Novikov, S. V., Zaitsev, V. K., Reith, H.
Published in Journal of electronic materials (01.06.2018)
Published in Journal of electronic materials (01.06.2018)
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Journal Article
An atomic carbon source for high temperature molecular beam epitaxy of graphene
Albar, J D, Summerfield, A, Cheng, T S, Davies, A, Smith, E F, Khlobystov, A N, Mellor, C J, Taniguchi, T, Watanabe, K, Foxon, C T, Eaves, L, Beton, P H, Novikov, S V
Published in Scientific reports (26.07.2017)
Published in Scientific reports (26.07.2017)
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Journal Article
Growth and characterization of highly mismatched GaN1−xSbx alloys
Yu, K. M., Novikov, S. V., Ting, Min, Sarney, W. L., Svensson, S. P., Shaw, M., Martin, R. W., Walukiewicz, W., Foxon, C. T.
Published in Journal of applied physics (28.09.2014)
Published in Journal of applied physics (28.09.2014)
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Journal Article
Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers
Waheeda, S.N., Zainal, N., Hassan, Z., Novikov, S.V., Akimov, A.V., Kent, A.J.
Published in Applied surface science (30.10.2014)
Published in Applied surface science (30.10.2014)
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Journal Article
On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn
Solomkin, F. Yu, Orekhov, A. S., Novikov, S. V., Arkharova, N. A., Isachenko, G. N., Zaitseva, N. V., Sharenkova, N. V., Samunin, A. U., Klechkovskaya, V. V., Burkov, A. T.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2019)
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Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy
Cherns, D, Webster, R F, Novikov, S V, Foxon, C T, Fischer, A M, Ponce, F A, Haigh, S J
Published in Nanotechnology (30.05.2014)
Published in Nanotechnology (30.05.2014)
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Journal Article
Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates
Novikov, S V, Stanton, N M, Campion, R P, Morris, R D, Geen, H L, Foxon, C T, Kent, A J
Published in Semiconductor science and technology (01.01.2008)
Published in Semiconductor science and technology (01.01.2008)
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