High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs
Hickman, Austin, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Lee, Kevin, Xing, Huili Grace, Jena, Debdeep
Published in IEEE electron device letters (01.08.2019)
Published in IEEE electron device letters (01.08.2019)
Get full text
Journal Article
Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes
Li, Wenshen, Nomoto, Kazuki, Hu, Zongyang, Jena, Debdeep, Xing, Huili Grace
Published in Applied physics express (01.06.2019)
Published in Applied physics express (01.06.2019)
Get full text
Journal Article
Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes
Wenshen Li, Nomoto, Kazuki, Pilla, Manyam, Pan, Ming, Xiang Gao, Jena, Debdeep, Xing, Huili Grace
Published in IEEE transactions on electron devices (01.04.2017)
Published in IEEE transactions on electron devices (01.04.2017)
Get full text
Journal Article
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Nomoto, Kazuki, Xiaodong Yan, Yu Cao, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, Xing, Huili Grace
Published in IEEE electron device letters (01.04.2015)
Published in IEEE electron device letters (01.04.2015)
Get full text
Journal Article
Electric field induced migration of native point defects in Ga2O3 devices
Haseman, Micah S., Ramdin, Daram N., Li, Wenshen, Nomoto, Kazuki, Jena, Debdeep, Xing, Huili Grace, Brillson, Leonard J.
Published in Journal of applied physics (21.01.2023)
Published in Journal of applied physics (21.01.2023)
Get full text
Journal Article
Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
Singhal, Jashan, Encomendero, Jimy, Cho, Yongjin, van Deurzen, Len, Zhang, Zexuan, Nomoto, Kazuki, Toita, Masato, Xing, Huili Grace, Jena, Debdeep
Published in AIP advances (01.09.2022)
Published in AIP advances (01.09.2022)
Get full text
Journal Article
High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p--n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process
Hatakeyama, Yoshitomo, Nomoto, Kazuki, Terano, Akihisa, Kaneda, Naoki, Tsuchiya, Tadayoshi, Mishima, Tomoyoshi, Nakamura, Tohru
Published in Japanese Journal of Applied Physics (01.02.2013)
Published in Japanese Journal of Applied Physics (01.02.2013)
Get full text
Journal Article
First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz
Hickman, Austin, Chaudhuri, Reet, Li, Lei, Nomoto, Kazuki, Bader, Samuel James, Hwang, James C. M., Xing, Huili Grace, Jena, Debdeep
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
Get full text
Journal Article
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes
Fabris, Elena, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo, De Santi, Carlo, Caria, Alessandro, Nomoto, Kazuki, Hu, Zongyang, Li, Wenshen, Gao, Xiang, Jena, Debdeep, Xing, Huili Grace
Published in IEEE transactions on electron devices (01.11.2019)
Published in IEEE transactions on electron devices (01.11.2019)
Get full text
Journal Article
Fully transparent field-effect transistor with high drain current and on-off ratio
Park, Jisung, Paik, Hanjong, Nomoto, Kazuki, Lee, Kiyoung, Park, Bo-Eun, Grisafe, Benjamin, Wang, Li-Chen, Salahuddin, Sayeef, Datta, Suman, Kim, Yongsung, Jena, Debdeep, Xing, Huili Grace, Schlom, Darrell G.
Published in APL materials (01.01.2020)
Published in APL materials (01.01.2020)
Get full text
Journal Article
Low temperature AlN growth by MBE and its application in HEMTs
Faria, Faiza Afroz, Nomoto, Kazuki, Hu, Zongyang, Rouvimov, Sergei, (Grace) Xing, Huili, Jena, Debdeep
Published in Journal of crystal growth (01.09.2015)
Published in Journal of crystal growth (01.09.2015)
Get full text
Journal Article
Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy
Raghuvansy, Sushma, McCandless, Jon P., Schowalter, Marco, Karg, Alexander, Alonso-Orts, Manuel, Williams, Martin S., Tessarek, Christian, Figge, Stephan, Nomoto, Kazuki, Xing, Huili Grace, Schlom, Darrell G., Rosenauer, Andreas, Jena, Debdeep, Eickhoff, Martin, Vogt, Patrick
Published in APL materials (01.11.2023)
Published in APL materials (01.11.2023)
Get full text
Journal Article
Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms
Li, Wenshen, Nomoto, Kazuki, Sundar, Aditya, Lee, Kevin, Zhu, Mingda, Hu, Zongyang, Beam, Edward, Xie, Jinqiao, Pilla, Manyam, Gao, Xiang, Rouvimov, Sergei, Jena, Debdeep, Xing, Huili Grace
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article
Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]
Raghuvansy, Sushma, McCandless, Jon P., Schowalter, Marco, Karg, Alexander, Alonso-Orts, Manuel, Williams, Martin S., Tessarek, Christian, Figge, Stephan, Nomoto, Kazuki, Xing, Huili Grace, Schlom, Darrell G., Rosenauer, Andreas, Jena, Debdeep, Eickhoff, Martin, Vogt, Patrick
Published in APL materials (01.01.2024)
Published in APL materials (01.01.2024)
Get full text
Journal Article
Improved WPM encoding for coalition structure generation under MC-nets
Liao, Xiaojuan, Koshimura, Miyuki, Nomoto, Kazuki, Ueda, Suguru, Sakurai, Yuko, Yokoo, Makoto
Published in Constraints : an international journal (01.01.2019)
Published in Constraints : an international journal (01.01.2019)
Get full text
Journal Article