Switching dynamics and modeling of multi-domain Zr-Doped HfO2 ferroelectric thin films
Noh, Youngji, Jung, Moonyoung, Yoon, Jungkyu, Hong, Seunghyeon, Park, Sanghyun, Kang, Bo Soo, Ahn, Seung-Eon
Published in Current applied physics (01.04.2019)
Published in Current applied physics (01.04.2019)
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Journal Article
3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
JUNG KWANGYOUNG, NOH YOUNGJI, PARK JUNG HWAN, HAN JEEHOON, RYU HYOJOON
Year of Publication 15.11.2022
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Year of Publication 15.11.2022
Patent
A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND
Myeong, Ilho, Lim, Suhwan, Kim, Taeyoung, Park, Sanghyun, Noh, Suseong, Lee, Seung Min, Woo, Jongho, Ko, Hanseung, Noh, Youngji, Choi, Munkang, Lee, Kiheun, Han, Sangwoo, Baek, Jongyeon, Kim, Kijoon, Jung, Dongjin, Kim, Jisung, Park, Jaewoo, Kim, Seunghyun, Kim, Hyoseok, Yoon, Ilyounz, Kim, Jaeho, Kim, Kwangsoo, Park, Kwangmin, Kuh, Bong Jin, Kim, Wanki, Ha, Daewon, Ahn, Sujin, Song, Jaihyuk, Yoo, Sijung, Lee, Hyun Jae, Choe, Duk-Hyun, Nam, Seung-Geol, Heo, Jinseong
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET
Kim, Taeyoung, Lim, Suhwan, Myeong, Ilho, Park, Sanghyun, Noh, Suseong, Lee, Seung Min, Woo, Jongho, Ko, Hanseung, Noh, Youngji, Choi, Moonkang, Lee, Kiheun, Han, Sangwoo, Baek, Jongyeon, Kim, Kijoon, Jung, Dongjin, Kim, Ji-sung, Park, Jaewoo, Kim, Seunghyun, Kim, Hyoseok, Yoo, Sijung, Lee, Hyun Jae, Choe, Duk-Hyun, Nam, Seung-Geol, Yoon, Ilyoung, Kim, Chaeho, Kim, Kwanzsoo, Park, Kwanzmin, Kuh, Bong Jin, Heo, Jinseong, Kim, Wanki, Ha, Daewon, Song, Jaihyuk
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
VERTICAL MEMORY DEVICE
Woo, Myunghun, Woo, Jongho, Kim, Kyunghoon, Noh, Youngji, Kang, Jooheon
Year of Publication 23.05.2024
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Year of Publication 23.05.2024
Patent
Comprehensive Design Guidelines of Gate Stack for QLC and Highly Reliable Ferroelectric VNAND
Lim, Suhwan, Kim, Taeyoung, Myeong, Ilho, Park, Sanghyun, Noh, Suseong, Lee, Seung Min, Woo, Jongho, Ko, Hanseung, Noh, Youngji, Choi, Moonkang, Lee, Kiheun, Han, Sangwoo, Baek, Jongyeon, Kim, Kijoon, Kim, Juhyung, Jung, Dongjin, Kim, Kwangsoo, Yoo, Sijung, Lee, Hyun Jae, Nam, Seung-Geol, Kim, Ji-Sung, Park, Jaewoo, Kim, Chaeho, Kim, Seunghyun, Kim, Hyoseok, Heo, Jinseong, Park, Kwangmin, Jeon, Sanghun, Kim, Wanki, Ha, Daewon, Shin, Yu Gyun, Song, Jaihyuk
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
NOH, Youngji, JUNG, Kwangyoung, PARK, Junghwan, HAN, Jeehoon, CHUN, Sanghun
Year of Publication 05.01.2023
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Year of Publication 05.01.2023
Patent
SEMICONDUCTOR MEMORY DEVICE
KANG, Joo-Heon, KIM, Kyunghoon, NOH, Youngji, WOO, Myunghun, WOO, Jongho
Year of Publication 16.05.2024
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Year of Publication 16.05.2024
Patent
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Park, Jung-Hwan, Han, Jeehoon, Ryu, Hyojoon, Noh, Youngji, Jung, Kwangyoung
Year of Publication 10.11.2022
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Year of Publication 10.11.2022
Patent