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Shimamoto, S., Yanagida, Y., Shirakawa, S., Miyakoshi, K., Oshima, T., Sakano, J., Wada, S., Noguchi, J.
Published in IEEE transactions on electron devices (01.01.2013)
Published in IEEE transactions on electron devices (01.01.2013)
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Uno, Shoichi, Katsuyama, Kiyomi, Noguchi, Junji, Sato, Kiyohiko, Oshima, Takayuki, Katsuyama, Masanori, Hara, Kazusato
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Published in Thin solid films (23.04.2007)
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Published in Japanese Journal of Applied Physics (01.06.2008)
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Published in Japanese Journal of Applied Physics (01.01.2005)
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Saito, Tatsuyuki, Noguchi, Junji, Kubo, Maki, Imai, Toshinori, Ito, Yuko
Published in Japanese Journal of Applied Physics (01.05.2004)
Published in Japanese Journal of Applied Physics (01.05.2004)
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Design of a Reliable p-Channel LDMOS FET With RESURF Technology
Miyoshi, Tomoyuki, Tominari, Tatsuya, Fujiwara, Hiroaki, Oshima, Takayuki, Noguchi, Junji
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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OMOTO CHIKAHIRO, KAWAKAMI HIROKI, NOGUCHI JUNJI, KAMIYA AKIRA, HAMADA YOSHIHIRO
Year of Publication 13.12.2023
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Year of Publication 13.12.2023
Patent
Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
Takeda, Ken-ichi, Hinode, Kenji, Noguchi, Junji, Yamaguchi, Hizuru
Published in Japanese Journal of Applied Physics (01.04.2001)
Published in Japanese Journal of Applied Physics (01.04.2001)
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Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide
Miyoshi, Tomoyuki, Oshima, Takayuki, Noguchi, Junji
Published in Japanese Journal of Applied Physics (01.05.2015)
Published in Japanese Journal of Applied Physics (01.05.2015)
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