A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations
Pellish, J.A., Reed, R.A., Sutton, A.K., Weller, R.A., Carts, M.A., Marshall, P.W., Marshall, C.J., Krithivasan, R., Cressler, J.D., Mendenhall, M.H., Schrimpf, R.D., Warren, K.M., Sierawski, B.D., Niu, G.F.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
Monte Carlo simulation of diffusion noise in AlGaAs/InGaAs/GaAs hetero-structure
Wu, Y., Niu, G.F., Ruan, G.
Published in Seventh International Conference on Indium Phosphide and Related Materials (1995)
Published in Seventh International Conference on Indium Phosphide and Related Materials (1995)
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Conference Proceeding
Hole density modeling of SiGe channel fully depleted SOI P-MOSFET
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Conference Proceeding
Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Niu, G.F., Chen, K.J., Chen, R.M.M., Ruan, G., Waho, T., Maezawa, K., Yamamoto, M.
Published in 1997 IEEE International Symposium on Circuits and Systems (ISCAS) (1997)
Published in 1997 IEEE International Symposium on Circuits and Systems (ISCAS) (1997)
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Conference Proceeding
Building user-interface for heterogeneous network device simulation: experiences with MINIMOS
Niu, G.F., Chen, R.M.M., Ruan, G.
Published in Proceedings 1996 IEEE Hong Kong Electron Devices Meeting (1996)
Published in Proceedings 1996 IEEE Hong Kong Electron Devices Meeting (1996)
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Conference Proceeding
High effective channel mobility back junction SiGe pmos: theory of operation
Niu, G.F., Ruan, G., Tang, T.A., Kwor, R.
Published in International Electron Devices and Materials Symposium (1994)
Published in International Electron Devices and Materials Symposium (1994)
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Conference Proceeding