Triangular Single Shockley Stacking Fault Analyses on 4H-SiC PiN Diode with Forward Voltage Degradation
Nishio, Johji, Okada, Aoi, Ota, Chiharu, Kushibe, Mitsuhiro
Published in Journal of electronic materials (01.09.2020)
Published in Journal of electronic materials (01.09.2020)
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Journal Article
Phase field model of single Shockley stacking fault expansion in 4H-SiC PiN diode
Kano, Akira, Goryu, Akihiro, Kato, Mitsuaki, Ota, Chiharu, Okada, Aoi, Nishio, Johji, Hirohata, Kenji, Shibutani, Yoji
Published in Japanese Journal of Applied Physics (01.02.2021)
Published in Japanese Journal of Applied Physics (01.02.2021)
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Journal Article
Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p-i-n diodes
Okada, Aoi, Nishio, Johji, Iijima, Ryosuke, Ota, Chiharu, Goryu, Akihiro, Miyazato, Masaki, Ryo, Mina, Shinohe, Takashi, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
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Journal Article
Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode
Goryu, Akihiro, Izumi, Satoshi, Hirohata, Kenji, Nishio, Johji, Kano, Akira, Ota, Chiharu, Okada, Aoi, Kato, Mitsuaki
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition
Masumoto, Keiko, Kudou, Chiaki, Tamura, Kentaro, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime
Published in Journal of crystal growth (15.10.2013)
Published in Journal of crystal growth (15.10.2013)
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Journal Article
Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
Masumoto, Keiko, Asamizu, Hirokuni, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime
Published in Materials (17.10.2014)
Published in Materials (17.10.2014)
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Journal Article
Influence of Epi-Layer Growth Pits on SiC Device Characteristics
Kudou, Chiaki, Tamura, Kentaro, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Asamizu, Hirokuni, Masumoto, Keiko
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC
Kudou, Chiaki, Ohno, Toshiyuki, Tamura, Kentaro, Nishio, Johji, Kojima, Kazutoshi, Ito, Sachiko, Asamizu, Hirokuni, Masumoto, Keiko
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Reduction in Background Carrier Concentration for 4H-SiC C-face Epitaxial Growth
Nishio, Johji, Asamizu, Hirokuni, Kushibe, Mitsuhiro, Kitai, Hidenori, Kojima, Kazutoshi
Published in MRS advances (01.01.2016)
Published in MRS advances (01.01.2016)
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Journal Article
Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD
Suzuki, Mariko, Nishio, Johji, Onomura, Masaaki, Hongo, Chie
Published in Journal of crystal growth (01.06.1998)
Published in Journal of crystal growth (01.06.1998)
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Journal Article
Partial dislocation structures at expansion terminating areas of bar-shaped single Shockley-type stacking faults and basal plane dislocations at the origin in 4H-SiC
Nishio, Johji, Ota, Chiharu, Iijima, Ryosuke
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
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Journal Article