The LMTK1-TBC1D9B-Rab11A Cascade Regulates Dendritic Spine Formation via Endosome Trafficking
Nishino, Hironori, Saito, Taro, Wei, Ran, Takano, Tetsuya, Tsutsumi, Koji, Taniguchi, Makoto, Ando, Kanae, Tomomura, Mineko, Fukuda, Mitsunori, Hisanaga, Shin-Ichi
Published in The Journal of neuroscience (27.11.2019)
Published in The Journal of neuroscience (27.11.2019)
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Isoform-dependent subcellular localization of LMTK1A and LMTK1B and their roles in axon outgrowth and spine formation
Wei, Ran, Sugiyama, Arika, Sato, Yuta, Nozumi, Motohiro, Nishino, Hironori, Takahashi, Miyuki, Saito, Taro, Ando, Kanae, Fukuda, Mitsunori, Tomomura, Mineko, Igarashi, Michihiro, Hisanaga, Shin-ichi
Published in Journal of biochemistry (Tokyo) (01.07.2020)
Published in Journal of biochemistry (Tokyo) (01.07.2020)
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Hyperactive and impulsive behaviors of LMTK1 knockout mice
Takahashi, Miyuki, Sugiyama, Arika, Wei, Ran, Kobayashi, Shizuka, Fukuda, Kimiko, Nishino, Hironori, Takahashi, Roka, Tsutsumi, Koji, Kita, Ichiro, Ando, Kanae, Manabe, Toshiya, Kamiguchi, Hiroyuki, Tomomura, Mineko, Hisanaga, Shin-ichi
Published in Scientific reports (22.09.2020)
Published in Scientific reports (22.09.2020)
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Improvement in surface morphology of GaSb buffer layer by two-step high and low temperature growth
Okumura, Shigekazu, Tomabechi, Shuichi, Suzuki, Ryo, Matsukura, Yusuke, Tsunoda, Koji, Kon, Jun-ichi, Nishino, Hironori
Published in Journal of crystal growth (01.11.2017)
Published in Journal of crystal growth (01.11.2017)
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Effects of As2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy
Okumura, Shigekazu, Tomabechi, Shuichi, Suzuki, Ryo, Tsunoda, Koji, Kon, Jun-ichi, Nishino, Hironori
Published in Japanese Journal of Applied Physics (01.10.2018)
Published in Japanese Journal of Applied Physics (01.10.2018)
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Crystal growth of SiC by step-controlled epitaxy
Ueda, Tetsuzo, Nishino, Hironori, Matsunami, Hiroyuki
Published in Journal of crystal growth (01.08.1990)
Published in Journal of crystal growth (01.08.1990)
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Effects of As 2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy
Okumura, Shigekazu, Tomabechi, Shuichi, Suzuki, Ryo, Tsunoda, Koji, Kon, Jun-ichi, Nishino, Hironori
Published in Japanese Journal of Applied Physics (01.11.2018)
Published in Japanese Journal of Applied Physics (01.11.2018)
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Journal Article
Effects of As^sub 2^ pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy
Okumura, Shigekazu, Tomabechi, Shuichi, Suzuki, Ryo, Tsunoda, Koji, Kon, Jun-ichi, Nishino, Hironori
Published in Japanese Journal of Applied Physics (01.11.2018)
Published in Japanese Journal of Applied Physics (01.11.2018)
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Photoluminescence of Ti doped 6H-SiC grown by vapor phase epitaxy
KIMOTO, T, NISHINO, H, UEDA, T, YAMASHITA, A, WOO SIK YOO, MATSUNAMI, H
Published in Japanese Journal of Applied Physics (01.02.1991)
Published in Japanese Journal of Applied Physics (01.02.1991)
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