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Published in Japanese Journal of Applied Physics (01.10.2006)
Published in Japanese Journal of Applied Physics (01.10.2006)
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WORK MACHINE, SYSTEM INCLUDING WORK MACHINE, AND CONTROL METHOD FOR WORK MACHINE
HISA HAYATO, NISHIGUCHI HARUMI, TAKEHARA KAZUO, TERAMURA AKIHIKO, MURA ATSUSHI, IKEGAMI KATSUHIRO, DAMBAYASHI HIROMU
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Year of Publication 18.06.2020
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Long-wavelength receiver optoelectronic integrated circuit on 3-inch-diameter GaAs substrate grown by InP-on-GaAs heteroepitaxy
MIHASHI, Y, GOTO, K, ISHIMURA, E, MIYASHITA, M, SHIMURA, T, NISHIGUCHI, H, KIMURA, T, SHIBA, T, OMURA, E
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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High-power high-efficiency 660-nm laser diodes for DVD-R/RW
Yagi, T., Nishiguchi, H., Yoshida, Y., Miyashita, M., Sasaki, M., Sakamoto, Y., Ono, K.-I., Mitsui, Y.
Published in IEEE journal of selected topics in quantum electronics (01.09.2003)
Published in IEEE journal of selected topics in quantum electronics (01.09.2003)
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SEMICONDUCTOR LASER DEVICE WITH DIELECTRIC MULTI-LAYER FILM
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Year of Publication 03.11.2004
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Year of Publication 03.11.2004
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Kink and power saturation of 660-nm AlGaInP laser diodes
Yoshida, Y., Sasaki, M., Shibata, K., Kawazu, Z., Ono, K.-I., Nishiguchi, H., Yagi, T., Nishimura, T.
Published in IEEE journal of quantum electronics (01.06.2005)
Published in IEEE journal of quantum electronics (01.06.2005)
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SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME
NISHIGUCHI HARUMI, YAGI TETSUYA, KAWAZU ZEMPEI, TASHIRO YOSHIHISA, SHIMA AKIHIRO
Year of Publication 21.06.2002
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Year of Publication 21.06.2002
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SEMICONDUCTOR LASER DEVICE HAVING DIELECTRIC REFLECTIVE FILM ON OPTICAL EXIT FACE
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Year of Publication 06.10.2004
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Year of Publication 06.10.2004
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SEMICONDUCTOR LASER DEVICE
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Year of Publication 26.12.2002
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Year of Publication 26.12.2002
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PREPARATION OF SEMICONDUCTOR DEVICE
OOKURA YUUJI, KASAI NOBUYUKI, NISHIGUCHI HARUMI, YAGI TETSUYA, ABE SHINJI, TASHIRO YOSHIHISA, TANIMURA JUNJI
Year of Publication 18.12.2002
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Year of Publication 18.12.2002
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SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
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Year of Publication 24.06.2004
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Year of Publication 24.06.2004
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Thermal Rollover around 460 mW Observation in Single-Lateral Mode 780 nm Laser Diodes with Window-Mirror Structure
Yagi, Tetsuya, Tashiro, Yoshihisa, Ohkura, Yuji, Abe, Shinji, Nishiguchi, Harumi, Mitsui, Yasuo
Published in Japanese Journal of Applied Physics (30.04.2003)
Published in Japanese Journal of Applied Physics (30.04.2003)
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Semiconductor device
KURAMOTO KYOSUKE, NISHIGUCHI HARUMI, SUZUKI YOSUKE, HIRONAKA MISAO, KUSUNOKI MASATSUGU
Year of Publication 07.01.2014
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Year of Publication 07.01.2014
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Method for manufacturing semiconductor device
KURAMOTO KYOSUKE, NISHIGUCHI HARUMI, HIRONAKA MISAO, KUSUNOKI MASATSUGU
Year of Publication 07.05.2013
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Year of Publication 07.05.2013
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