Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks
Agarwal, Sapan, Garland, Diana, Niroula, John, Jacobs-Gedrim, Robin B., Hsia, Alex, Van Heukelom, Michael S., Fuller, Elliot, Draper, Bruce, Marinella, Matthew J.
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2019)
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2019)
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Journal Article
GaN Memory Operational at 300 °C
Yuan, Mengyang, Xie, Qingyun, Niroula, John, Chowdhury, Nadim, Palacios, Tomas
Published in IEEE electron device letters (01.12.2022)
Published in IEEE electron device letters (01.12.2022)
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Journal Article
Highly Scaled GaN Complementary Technology on a Silicon Substrate
Xie, Qingyun, Yuan, Mengyang, Niroula, John, Sikder, Bejoy, Greer, James A., Rajput, Nitul S., Chowdhury, Nadim, Palacios, Tomas
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator
Marinella, Matthew J., Agarwal, Sapan, Hsia, Alexander, Richter, Isaac, Jacobs-Gedrim, Robin, Niroula, John, Plimpton, Steven J., Ipek, Engin, James, Conrad D.
Published in IEEE journal on emerging and selected topics in circuits and systems (01.03.2018)
Published in IEEE journal on emerging and selected topics in circuits and systems (01.03.2018)
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Journal Article
GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform
Yuan, Mengyang, Xie, Qingyun, Fu, Kai, Hossain, Toiyob, Niroula, John, Greer, James A., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomas
Published in IEEE electron device letters (01.11.2022)
Published in IEEE electron device letters (01.11.2022)
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Journal Article
Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
Yuan, Mengyang, Niroula, John, Xie, Qingyun, Rajput, Nitul S., Fu, Kai, Luo, Shisong, Das, Sagar Kumar, Iqbal, Abdullah Jubair Bin, Sikder, Bejoy, Isamotu, Mohamed Fadil, Oh, Minsik, Eisner, Savannah R., Senesky, Debbie G., Hunter, Gary W., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomas
Published in IEEE electron device letters (01.07.2023)
Published in IEEE electron device letters (01.07.2023)
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Journal Article
High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
Niroula, John, Xie, Qingyun, Rajput, Nitul S., Darmawi-Iskandar, Patrick K., Rahman, Sheikh Ifatur, Luo, Shisong, Palash, Rafid Hassan, Sikder, Bejoy, Yuan, Mengyang, Yadav, Pradyot, Micale, Gillian K., Chowdhury, Nadim, Zhao, Yuji, Rajan, Siddharth, Palacios, Tomás
Published in Applied physics letters (13.05.2024)
Published in Applied physics letters (13.05.2024)
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Journal Article
Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C
Niroula, John, Taylor, Matthew A., Xie, Qingyun, Yadav, Pradyot, Luo, Shisong, Zhao, Yuji, Palacios, Tomas
Published in 2024 Device Research Conference (DRC) (24.06.2024)
Published in 2024 Device Research Conference (DRC) (24.06.2024)
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Conference Proceeding
Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
Xie, Qingyun, Niroula, John, Rajput, Nitul S., Yuan, Mengyang, Luo, Shisong, Fu, Kai, Isamotu, Mohamed Fadil, Palash, Rafid Hassan, Sikder, Bejoy, Eisner, Savannah R., Surdi, Harshad, Belanger, Aidan J., Darmawi-Iskandar, Patrick K., Aksamija, Zlatan, Nemanich, Robert J., Goodnick, Stephen M., Senesky, Debbie G., Hunter, Gary W., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomás
Published in Applied physics letters (22.04.2024)
Published in Applied physics letters (22.04.2024)
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Journal Article
First Demonstration of GaN RF HEMTs on Engineered Substrate
Yadav, Pradyot, Xie, Qingyun, Niroula, John, Micale, Gillian K., Pal, Hridibrata, Palacios, Tomas
Published in 2023 Device Research Conference (DRC) (25.06.2023)
Published in 2023 Device Research Conference (DRC) (25.06.2023)
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Conference Proceeding
GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devices
Palacios, Tomas, Zubair, Ahmad, Niroula, John, Perozek, Joshua, Chowdhury, Nadim, Pei, Dongfei, Dipsey, Mark, Emmer, Hal, Lu, Bin
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
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Conference Proceeding
Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
Xie, Qingyun, Yuan, Mengyang, Niroula, John, Sikder, Bejoy, Luo, Shisong, Fu, Kai, Rajput, Nitul S., Pranta, Ayan Biswas, Yadav, Pradyot, Zhao, Yuji, Chowdhury, Nadim, Palacios, Tomas
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Materials and Technology Issues for the Next Generation of Power Electronic Devices
Zubair, Ahmad, Niroula, John, Chowdhury, Nadim, Zhang, Yuhao, Lemettinen, Jori, Palacios, Tomas
Published in 2020 Device Research Conference (DRC) (01.06.2020)
Published in 2020 Device Research Conference (DRC) (01.06.2020)
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Conference Proceeding
Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks
Agarwal, Sapan, Garland, Diana, Niroula, John, Jacobs-Gedrim, Robin B., Hsia, Alex, Van Heukelom, Michael S., Fuller, Elliot, Draper, Bruce, Marinella, Matthew J.
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2019)
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Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2019)
Journal Article
Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications
Niroula, John, Agarwal, Sapan, Jacobs-Gedrim, Robin, Schiek, Richard L., Hughart, David, Hsia, Alex, James, Conrad D., Marinella, Matthew J.
Published in Journal of computational electronics (01.12.2017)
Published in Journal of computational electronics (01.12.2017)
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Journal Article
High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology
Yuan, Mengyang, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S., Chowdhury, Nadim, Palacios, Tomas
Published in 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) (07.11.2022)
Published in 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) (07.11.2022)
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Conference Proceeding
Field-induced Acceptor Ionization in Enhancement-mode GaN p-MOSFETs
Chowdhury, Nadim, Xie, Qingyun, Niroula, John, Rajput, Nitul S., Cheng, Kai, Then, Han Wui, Palacios, Tomas
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
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Conference Proceeding
Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform
Xie, Qingyun, Yuan, Mengyang, Niroula, John, Greer, James A., Rajput, Nitul S., Chowdhury, Nadim, Palacios, Tomas
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding